Join Navitas Semiconductor at Baird's 51st annual Global Industrial Conference in-person on Tuesday, November 9 – Thursday, November 11, 2021, at the newly refreshed Four Seasons Hotel in Chicago, Illinois. Conference Format 30-minute formal and fireside chat presentations 15-minute breakout sessions 1-1 and group meetings with institutional and private equity investors available upon request. More information to follow.
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The conference will be held virtually on Tuesday, January 25 uniting company leaders with investors and select corporates to provide an intimate and constructive forum for discussion. The conference will be hosted by Baird’s Equity Research and Global Investment Banking teams and include c-level management from companies across several sectors focused on: Vehicle Electrification, ADAS/Autonomous Driving, Mobility. Baird conferences are by invitation only; reach out to your Baird Representative for additional details. CEO, Gene Sheridan to highlight performance and environmental benefits of next-gen GaN power ICs in fast chargers, EV, solar and data center markets. GaN is a next-generation semiconductor technology that runs up to 20x faster than legacy silicon and enables up to 3x more power and 3x faster charging, with up to 40% energy savings in half the size and weight of legacy silicon solutions. Navitas’ GaNFast™ power ICs integrate GaN power and drive plus protection and control to deliver simple, small, fast and efficient performance. With over 145 patents issued or pending, and significant trade secrets including a proprietary process design kit (PDK), Navitas believes it has a multi-year lead in next-generation GaN power ICs. Click the PDF below to view the presentation.
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Mr. Sheridan will present in a group webcast and Q&A at 11am on March 3rd, hosted by Baird Senior Research Analyst, Tristan Gerra, with 1-on-1 investor meetings scheduled throughout the day. Click the PDF below to view the presentation.
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CEO, Gene Sheridan and Stephen Oliver, VP Corp. Mktg & IR, to highlight performance and environmental benefits of next-gen GaN power ICs in fast chargers, EV, solar and data center markets. Navitas CEO presentation begins on June 6th, 10:50am EDT. GaN is a next-generation semiconductor technology that runs up to 20x faster than legacy silicon and enables up to 3x more power and 3x faster charging, with up to 40% energy savings in half the size and weight of legacy silicon solutions. Navitas’ GaNFast™ power ICs integrate GaN power and drive plus protection and control to deliver simple, small, fast and efficient performance. With over 145 patents issued or pending, and significant trade secrets including a proprietary process design kit (PDK), Navitas believes it has a multi-year lead in next-generation GaN power ICs.
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Navitas to highlight pure-play, next-gen power semiconductors (GaN & SiC) at Baird Newly Public Company Virtual Access Day. CEO, Gene Sheridan and CFO, Ron Shelton will address a market opportunity of over $20B/year to replace legacy silicon chips during a virtual ‘fire-side chat’, at 2:20 pm on Wednesday, August 17th
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Join Navitas Semiconductor at Baird’s 52nd annual Global Industrial Conference in-person on, November 8 – November 10, 2022, in Chicago, Illinois. More information to follow.
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Baird 2025 Global Consumer, Technology & Services ConferenceJune 3, 2025 Fireside Chat 8:30-9:00 ET; 1-on-1 meetings with Gene Sheridan, CEOLocation: InterContinental Barclay – New York, NYhttps://wsw.com/webcast/baird79/nvts/1971270 Click the PDF below to view the presentation: Navitas Baird Update 2025
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