Latest Past Events

Baird 51st Annual Global Industrial Conference In-Person

Four Seasons Hotel Chicago, Illinois, USA

Join Navitas Semiconductor at Baird's 51st annual Global Industrial Conference in-person on Tuesday, November 9 – Thursday, November 11, 2021, at the newly refreshed Four Seasons Hotel in Chicago, Illinois. Conference Format 30-minute formal and fireside chat presentations 15-minute breakout sessions 1-1 and group meetings with institutional and private equity investors available upon request. More information to follow.

IEEE WiPDA 2021

Virtual

Dan Kinzer, Chief Technical Officer and Co-Founder will be hosting a keynote session at IEEE WiPDA 2021.The IEEE Workshop on Wide Bandgap Power Devices & Applications (WiPDA) provides a forum for device scientists, circuit designers, & application engineers from the Power Electronics & Electron Devices Societies to share technology updates, research findings, experience & potential applications. Keynote Session: Advances in GaN Power ICs: Efficiency, Reliability & Autonomy GaNFast™ power ICs, use next-generation gallium nitride (GaN) to replace legacy silicon chips to enable up to 3x faster charging and 3x more power in half the size and weight for mobile fast chargers, consumer electronics, solar, data centers and EVs, replacing silicon in a market worth over $13B by 2026. Now, a next-generation enables even higher efficiency, autonomy and reliability with precision sensing of system current, voltage and temperature and real-time control and protection. External monitoring components - such as large, lossy sense resistors – are eliminated, reducing system power loss, reducing complexity and reducing cost. This new GaNFast generation is a core element as we “Electrify Our World™” and accelerate the conversion away from fossil fuel sources and loads. As well as enabling efficiency improvements that reduce the carbon emissions of […]

EarthShift Global, “Reducing Consumer Electronics’ Impacts with Gallium Nitride Semiconductors in Place of Silicon”

Free Webinar

Gallium Nitride (GaN) is a next-generation semiconductor material with characteristics that make it an excellent candidate for use in the devices used to charge mobile devices and other consumer electronics. GaN delivers more efficient AC/DC power conversion compared to traditional silicon devices, which reduces wasted energy during charging, while also significantly reducing the size and weight of the charger, decreasing life cycle environmental impacts. This presentation will be of special interest to practitioners working with consumer electronics or interested in broader electrical efficiency benefits across applications including solar energy generation, electric vehicle, and datacenter energy use. Click the PDF below to view the presentation.