In The Media
Planet Analog: Power Electronics: Re-Invented
Navitas CEO, Gene Sheridan, shares his view on a major shift in power electronics after the industry's 30-year plateau. The combination of resonant topologies, fast GaN transistors and GaN analog integration completes the needed trifecta for extraordinary change. View...
Electronic Design – Take a Practical Path Toward High-Performance Power Conversion
Integrated GaN Power IC building blocks enable fast-switching topologies with simple “digital-in, power-out” capability. In power conversion, fast switching combined with high efficiency enables small size, low weight, and lower system cost. To achieve this, we need...
EE Times Europe – 650V AllGaN Power ICs in Production
Navitas Semiconductor's iDrive Gallium Nitride (GaN) Power ICs use the company’s proprietary AllGaN technology, enabling up to 100x higher frequencies than silicon. The NV6131, NV6105 & NV6115 offer a high-efficiency 650V, 160mOhm power FET with increasing...
CBS8 San Diego – Production Enables a High-Speed Revolution in Power Electronics
Navitas Semiconductor today announced the immediate availability of production qualified iDrive Gallium Nitride (GaN) Power ICs using the company’s proprietary AllGaN technology. The NV6131, NV6105 & NV6115 offer a high-efficiency 650V, 160mOhm power FET with...
Semiconductor Today – Navitas Delivers First GaN Power ICs
"GaN has the potential to displace a large percentage of the $15bn power silicon market, but adoption has been partially limited by the system challenges in cost-effectively driving and controlling the GaN power device at high speeds," notes power semiconductor market...