Navitas Semiconductor today announced the immediate availability of production qualified iDrive Gallium Nitride (GaN) Power ICs using the company’s proprietary AllGaN technology. The NV6131, NV6105 & NV6115 offer a high-efficiency 650V, 160mOhm power FET with increasing integration of digital and analog circuits, leading to ground breaking speed, energy efficiency, power density and reduced system cost.
CBS8 San Diego – Production Enables a High-Speed Revolution in Power Electronics
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