EE Times EuropeNavitas Semiconductor’s iDrive Gallium Nitride (GaN) Power ICs use the company’s proprietary AllGaN technology, enabling up to 100x higher frequencies than silicon. The NV6131, NV6105 & NV6115 offer a high-efficiency 650V, 160mOhm power FET with increasing integration of digital and analog circuits. Navitas GaN Power ICs with iDrive offer a 10-100x increase in system operating frequency combined with higher efficiencies to enable up to a 5x increase in power densities and 20% lower system costs.

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