The Jefferies Group is highly-regarded for sustainable investing with a long-term partnership approach. Navitas co-founder and COO/CTO Dan Kinzer will highlight how next-generation gallium nitride (GaN) semiconductor technologies will drive the advances in electric vehicles, industrial applications and renewable energy that are essential to achieving carbon neutrality goals. Mr. Kinzer’s presentation is open to Jefferies’ clients and will take place on Thursday January 20th, at 3pm eastern. Click the PDF below to view the presentation.

Navitas Semiconductor to update key Asian investors on GaN technology and our partners. The Navitas NDR representatives will be Gene Sheridan, co-founder and CEO, Todd Glickman, CFO and Stephen Oliver, VP Corporate Marketing & Investor Relations. To register for the NDR events, please contact Annie Liu, China Renaissance Corporate Access, via [email protected]. Click the PDF below to view the presentation.

CEO, Gene Sheridan, VP & GM Navitas, Charles Zha, Sr. Director of Sales for Taiwan and Strategic Accounts, Webber Lo, VP Corporate Marketing & Investor Relations, Stephen Oliver: To highlight performance and environmental benefits of next-gen GaN power ICs in fast chargers, EV, solar and data center markets. March 1st, 11:00-12:00 HKT. GaN is a next-generation semiconductor technology that runs up to 20x faster than legacy silicon and enables up to 3x more power and 3x faster charging, with up to 40% energy savings in half the size and weight of legacy silicon solutions. Navitas’ GaNFast™ power ICs integrate GaN power and drive plus protection and control to deliver simple, small, fast and efficient performance. With over 145 patents issued or pending, and significant trade secrets including a proprietary process design kit (PDK), Navitas believes it has a multi-year lead in next-generation GaN power ICs. Click the PDF below to view the presentation. English: Chinese:

Mr. Sheridan will present in a group webcast and Q&A at 11am on March 3rd, hosted by Baird Senior Research Analyst, Tristan Gerra, with 1-on-1 investor meetings scheduled throughout the day. Click the PDF below to view the presentation.

Navitas to highlight performance and environmental benefits of next-gen GaN power ICs in fast chargers, EV, solar and data center markets. GaN is a next-generation semiconductor technology that runs up to 20x faster than legacy silicon and enables up to 3x more power and 3x faster charging, with up to 40% energy savings in half the size and weight of legacy silicon solutions. Navitas’ GaNFast™ power ICs integrate GaN power and drive plus protection and control to deliver simple, small, fast and efficient performance. With over 145 patents issued or pending, and significant trade secrets including a proprietary process design kit (PDK), Navitas believes it has a multi-year lead in next-generation GaN power ICs.