First Production-Released 650 V
Bi-Directional 
Power ICs with 
Dual-Channel Isolated GaN Driver
First Production-Released 650 V
Bi-Directional Power ICs with Dual-Channel Isolated GaN Driver
Bi-Directional GaNFast power ICs function as two ‘back-to-back’ GaN power switches. They are leading-edge, monolithic, single-chip designs with a merged drain structure, two gate controls, and a patented, integrated, autonomous substrate clamp. This latest breakthrough creates a paradigm shift in power with single-stage bi-directional switch (BDS) converters, enabling the transition from two-stage to single-stage topologies, to provide highest efficiency, power density, and performance, while reducing system cost and complexity.
650 V Bi-Directional GaN with top-cooled TOLT
High-speed dual-channel
digital Isolated GaN driver
GaNFast™ Bi-directional Monolithically Replaces up to 4 Power Switches
One high-speed, high-efficiency bi-directional GaNFast IC replaces up to 4 older switches, increasing system performance while reducing component count, PCB area, and system costs.
• Higher system efficiency
• MHz switching frequency
• Improves reliability
• Simplified circuit design
• Reduced component cost
• Reduced PCB area
• Higher system efficiency
• MHz switching frequency
• Improves reliability
• Simplified circuit design
• Reduced component cost
• Reduced PCB area
Single-stage Topology Advantage
Over 70% of today’s high-voltage power converters use a ‘two-stage’ topology. For example, a typical AC-DC converter implements an initial power-factor-correction (PFC) stage and a follow-on DC-DC stage, with bulky ‘DC-link’ buffering capacitors. The resulting systems are large, lossy, and expensive. Bi-directional GaNFast consolidates the two stages into a single, high-speed, high-efficiency stage and eliminates the bulky capacitors and input inductors – the ultimate solution in power electronics.
Single-stage Converters
Bi-Directional GaNFast advances topologies by directly converting AC input voltage into a highly-efficient, corrected & controlled AC or DC output voltage. Targeted applications range widely from EV charging (On-Board Chargers (OBC) and roadside), solar inverters, energy storage and motor drives.
Motor Drives
EV On-Board Charger (OBC)
Solar Microinverter
Active Substrate Clamp Delivers Efficient, Reliable, Cool Operation
Navitas patented monolithically-integrated active substrate clamp automatically connects the substrate to the Source terminal with the lowest voltage potential, eliminating a ‘back-gating’ effect, which prevents an undesired increase in RSS(ON) when the substrate potential is uncontrolled. This results in a stable RSS(ON) for highest performance, efficiency, & reliability.
Automatically detects and connects alternative Sources to Substrate for highest performance, efficiency & reliability.
3x lower RSS(ON) = 15°C cooler!
– Dual Independent Channels Digital Isolated GaN Driver
is Navitas new galvanically-isolated, high-speed driver family optimized to isolate and drive GaN/SiC, including GaN BDS ICs. With 4x higher transient immunity than existing drivers (up to 200 V/ns) and no external negative bias supply needed, they deliver reliable, fast, accurate power control in high-voltage systems.
No external negative bias supply required
| Feature | Existing Drivers | IsoFast NV1702 | Benefit |
|---|---|---|---|
| Transient immunity | 50 V/ns | 200 V/ns | 4x better (high-freq GaN/SiC) |
| Negative drive req'd | Yes | No | Save $0.50, 10 pcs per BDS |
| Reg 6V drive req'd | Yes | No | Save $0.30, 8 pcs per BDS |
| Standby leakage | 10 mA | 0.3 mA | Improved standby efficiency |
| Housekeeping (UVLO, 1st pulse) | Start-up / shutdown glitches | UVLO, clean 1st pulse | Reliable |
NVE107C – 650V Bi-directional GaN Eval Board
The NVE107C evaluation board consists of a power stage using two bi-directional GaN switches (NV6427) in a half-bridge configuration.
The bi-directional switches are driven by Navitas’ NV1702 IsoFast™ isolated dual-channel GaN driver.
User Guide:
Please contact [email protected] for the availability of the NVE107C Eval Board.