| New-Generation SiC MPS Diodes with low knee voltages |
1969/12 (Dec) |
ICSCRM 2023 |
|
| New-Generation of Trench-Assisted Planar SiC MOSFETs |
1969/12 (Dec) |
ICSCRM 2023 |
|
| Variable-Speed Motor Drives Reap Benefits Of Integrated GaN |
1969/12 (Dec) |
How2Power |
|
| GaNSafe – the World’s Safest GaN Power Semiconductor |
1969/12 (Dec) |
Semicon |
|
| GaNSafe Power ICs Create Highest Density and Efficiency in Data Center and EV Power Systems |
1969/12 (Dec) |
Semicon |
|
| GaN & SiC: Accelerating Revolutions (Video) |
1969/12 (Dec) |
Aspencore PowerUp 2023 |
|
| GaN & SiC: Accelerating Revolutions (PDF) |
1969/12 (Dec) |
Aspencore PowerUp 2023 |
|
| The Genesis of GeneSiC and the Future of Silicon Carbide |
1969/12 (Dec) |
Bodo's Power Systems |
|
| GaNSense™ Power ICs Integrate Fast, Autonomous, Precise Protection Circuits for Ultimate System Robustness |
1969/12 (Dec) |
Power Systems Design |
|
| AN027: 1200 V SiC JBS Diodes With Ultra-Low Capacitive Reverse Recovery Charge For Fast Switching Applications |
1969/12 (Dec) |
Application Note |
|
| AN026: 1200 V Schottky Diodes With Temperature Invariant Barrier Heights and Ideality Factors |
1969/12 (Dec) |
Application Note |
|
| GaNSense™ Power ICs Enable Next-Gen, Ultra-High-Efficiency and High-Power-Density 140 W, PD3.1 Adapter Designs |
1969/12 (Dec) |
Bodo's Power Systems |
|
| 3.3 kV SiC MOSFETs Accelerate Grid-Connected Energy Storage |
1969/12 (Dec) |
Power Electronics News |
|
| High-Frequency High-Efficiency LLC Module with Planar Matrix Transformer for CPRS Application Using GaN Power IC |
1969/12 (Dec) |
PCIM Europe 2023 |
|
| GaN Power ICs Drive Efficiency and Size Improvements in BLDC Motor Drive Applications |
1969/12 (Dec) |
PCIM Europe 2023 |
|
| GaN Power ICs Enable 300cc 700kHz 300W AC-DC Converter |
1969/12 (Dec) |
PCIM Europe 2023 |
|
| GaN-based High Frequency and High-power Density 2-in-1 Bidirectional OBCM Design for EV Application |
1969/12 (Dec) |
PCIM Europe 2023 |
|
| High-Frequency High-Efficiency LLC Module with Planar Matrix Transformer for CPRS Application Using GaN Power IC |
1969/12 (Dec) |
PCIM Europe 2023 |
|
| GaN Power ICs Drive Efficiency and Size Improvements in BLDC Motor Drive Applications |
1969/12 (Dec) |
PCIM Europe 2023 |
|
| GaN Power ICs Enable 300cc 700kHz 300W AC-DC Converter |
1969/12 (Dec) |
PCIM Europe 2023 |
|
| GaN-based High Frequency and High-power Density 2-in-1 Bidirectional OBCM Design for EV Application |
1969/12 (Dec) |
PCIM Europe 2023 |
|
| AN021: Gate-Driver IC Selection Guidelines for GeneSiC MOSFETs |
1969/12 (Dec) |
Application Note |
|
| An Ultra-High Efficiency High Power Density 140W PD3.1 AC-DC Adapter Using GaN Power ICs |
1969/12 (Dec) |
APEC 2023 |
|
| GeneSiC high-speed, high-voltage SiC drives high-power innovation |
1969/12 (Dec) |
APEC 2023 |
|
| The Past, Present, and Future of Current Sensing |
1969/12 (Dec) |
APEC 2023 |
|
| New GaNSense Half-Bridge IC Enables Next Gen High-Frequency, High-Efficiency, High-Density Topologies |
1969/12 (Dec) |
APEC 2023 |
|
| Pure-Play, High-Speed GaNFast and GeneSiC |
1969/12 (Dec) |
APEC 2023 |
|
| Sustainability Benefits of GaNFast Power ICs |
1969/12 (Dec) |
APEC 2023 |
|
| Efficient 400-800V Charging & Conversion with GaNFast Power ICs & GeneSiC Trench-Assisted Planar-Gate MOSFETs |
1969/12 (Dec) |
Advanced Automotive Tech Forum 2023 |
|
| Beyond Simply Replacing Silicon – System Level Impact of GaN Power ICs in Key Applications |
1969/12 (Dec) |
ECPE 2023 |
|
| AN020: Thermal Simulation Model |
1969/12 (Dec) |
Application Note |
|
| SiC Delivers Next-Generation Efficiency and Sustainability |
1969/12 (Dec) |
Power Systems Design |
|
| Navitas GaNFast™ IC Field Results in High-Volume Production |
1969/12 (Dec) |
Navitas Semiconductor |
|
| AN019: New GaNFast™ Half-Bridge Power ICs with GaNSense™ Technology |
1969/12 (Dec) |
Application Note |
|
| Planet Navitas Showcases Tomorrow’s Sustainable World at CES 2023 |
1969/12 (Dec) |
EE Times Asia |
|
| Charging Into The GaNFast Future – Ugreen |
1969/12 (Dec) |
CES 2023 |
|
| The Power of GaNFast Technology on the OnePlus 10T-5G |
1969/12 (Dec) |
CES 2023 |
|
| Anker 767 PowerHouse – GaNPrime 2048Wh | 2400W |
1969/12 (Dec) |
CES 2023 |
|
| Something You Want With Navitas GaN – Spigen |
1969/12 (Dec) |
CES 2023 |
|
| The Silicon Chip is Dead! |
1969/12 (Dec) |
CES 2023 |
|
| Living Well Off the Grid |
1969/12 (Dec) |
CES 2023 |
|
| Electrify Our World |
1969/12 (Dec) |
CES 2023 |
|
| From 650V to 6.5 kV, GeneSiC MOSFETs Drive Innovation |
1969/12 (Dec) |
Bodo's Wide Bandgap |
|
| Electric motors benefit from GaNFast™ |
1969/12 (Dec) |
Bodo's Wide Bandgap 2022 |
|
| GaNFast Power ICs Maximize Transient Voltage Ratings and Boost Circuit Ruggedness |
1969/12 (Dec) |
Power Systems Design |
|
| Pure-Play, Next-Generation Power Semiconductors |
1969/12 (Dec) |
CPSSC |
|
| GaNFast™ Half-Bridge IC and Applications |
1969/12 (Dec) |
CPSSC |
|
| GaNFast™ and GeneSiC™: Twin Engines Drive the Future of High-Power Applications |
1969/12 (Dec) |
CPSSC |
|
| GaN Integration Drives Next-Generation Power Systems |
1969/12 (Dec) |
CPSSC |
|
| SiC and GaN Applications in Electric Vehicles: Current Issues |
1969/12 (Dec) |
ECCE |
|
| GaN Drives Development of Next-Generation EVs |
1969/12 (Dec) |
Power Systems Design |
|
| GaN ICs Drive Sustainability and Deliver CarbonNeutral Status |
1969/12 (Dec) |
Power Electronics News |
|
| Advancing GaN Power ICs: Efficiency, Reliability & Autonomy |
1969/12 (Dec) |
EPE |
|
| GaNSense™ 半桥集成技术加速电力电子技术革命 |
1969/12 (Dec) |
EET China |
|
| GaNSense™ Half-Bridge Integration Accelerates the Power-Electronics Revolution |
1969/12 (Dec) |
Power Electronics News |
|
| Current Sensing: Past, Present, and Future |
1969/12 (Dec) |
Electronic Design |
|
| Advancing GaN Power Integration: Efficiency, Reliability & Autonomy |
1969/12 (Dec) |
PowerAmerica |
|
| Vollständig geschützte GaN-Leistungs-ICs sorgen für robuste und kostengünstige Motorantriebe |
1969/12 (Dec) |
Elektronik |
|
| Fully-Protected GaN Power ICs Deliver Robustness and Lower System Costs to Motor Drives |
1969/12 (Dec) |
Elektronik |
|
| TSMC Technology Symposium 2022 |
1969/12 (Dec) |
Presentation |
|
| GaN ICs Simplify Designs, Improve Performance and Boost Robustness & Reliability |
1969/12 (Dec) |
White Paper |
|
| Bodo’s Panel: The Industry Leader in GaN Power ICs |
1969/12 (Dec) |
PCIM |
|
| 采用了GaNSense™技术的NV6169 PQFN 8×8 GaNFast™功率IC，适用于更高功率的应用 |
1969/12 (Dec) |
Application Note |
|
| AN016: NV6169 PQFN 8×8 GaNFast™ Power IC with GaNSense™ Technology for Higher-Power Applications |
1969/12 (Dec) |
Application Note |
|
| Autonomous GaN Power ICs Deliver High-Performance, Reliable Motor Drives |
1969/12 (Dec) |
White Paper |
|
| Reducing Consumer Electronics’ impact with Gallium Nitride (GaN) Power Semiconductors |
1969/12 (Dec) |
White Paper |
|
| GaN Reliability: Beyond Performance and Efficiency |
1969/12 (Dec) |
White Paper |
|
| GaNFast™ 20-Year Warranty (Chinese) |
1969/12 (Dec) |
White Paper |
|
| GaNFast™ 20-Year Warranty |
1969/12 (Dec) |
White Paper |
|
| GaN Half-Bridge ICs Enable Next Gen MidPower, Multi-Port, High-Density Charger Topologies |
1969/12 (Dec) |
APEC |
|
| Advancements in GaN Power IC System Integration |
1969/12 (Dec) |
APEC |
|
| Navitas Exhibitor Seminar |
1969/12 (Dec) |
APEC |
|
| GaN Adoption, Market-by-Market |
1969/12 (Dec) |
APEC |
|
| Chinese Sustainability Report 2021 |
1969/12 (Dec) |
White Paper |
|
| Sustainability Report 2021 |
1969/12 (Dec) |
White Paper |
|
| AN015: 具有无损电流检测和自动保护功能的GaNSense™技术的新一代GaNFast™Power ICs |
1969/12 (Dec) |
Application Note |
|
| AN015: New GaNFast™ Power ICs with GaNSense™ Technology Loss-Less Current Sensing & Autonomous Protection |
1969/12 (Dec) |
Application Note |
|
| Bodo’s Wide Bandgap Event: GaNFast™ Power IC Solutions for EV, Solar & Industrial |
1969/12 (Dec) |
Bodo's Wide Bandgap |
|
| Bodo’s Wide Bandgap Event: GaNFast™ Architecture, Performance in High-Power Systems |
1969/12 (Dec) |
Bodo's Wide Bandgap |
|
| Next-Generation Gallium Nitride Semiconductor Accelerates Carbon Neutrality |
1969/12 (Dec) |
Nomura |
|
| Power Up Virtual Expo: Electrify Our World™ |
1969/12 (Dec) |
PowerUP |
|
| Advances in GaN Power ICs: Efficiency, Reliability & Autonomy |
1969/12 (Dec) |
WiPDA |
|
| Electronica South China – Navitas |
1969/12 (Dec) |
Electronica |
|
| Electrifying Our World: The Navitas Quality Journey |
1969/12 (Dec) |
White Paper |
|
| GaN Technology Enables Fast Electric Charging Systems |
1969/12 (Dec) |
EE Times |
|
| Gallium Nitride (GaN) Enables Next-Generation High-Frequency Circuits |
1969/12 (Dec) |
White paper |
|
| Gallium Nitride (GaN) Power ICs: Turning Academic Dreams into Industry Reality |
1969/12 (Dec) |
White Paper |
|
| International Women in Engineering Day |
1969/12 (Dec) |
White Paper |
|
| Electrify Our World™ |
1969/12 (Dec) |
APEC |
|
| Pulsed ACF for Low-Profile GaN Fast Chargers |
1969/12 (Dec) |
APEC |
|
| 300W Multi-Mode Totem-pole PFCUsing GaN Power ICs |
1969/12 (Dec) |
APEC |
|
| The Future of Power: High-Frequency Systems Enabled by GaN |
1969/12 (Dec) |
Electronica China |
|
| Gallium Nitride: Catalyst for the Next Generation of Power |
1969/12 (Dec) |
White paper |
|
| Fast Forward to the GaN Data Center |
1969/12 (Dec) |
White paper |
|
| GaN: Future Direction & Challenges |
1969/12 (Dec) |
White paper |
|
| The GaN Revolution in Fast Charging & Power Conversion |
1969/12 (Dec) |
White paper |
|
| The Future of Charging is GaNFast! (English) |
1969/12 (Dec) |
Chongdiantou |
|
| 纳微GaNFast：定义快充新未来！(The Future of Charging is GaNFast!) (Chinese) |
1969/12 (Dec) |
Chongdiantou |
|
| 纳微氮化镓市场分享及展望A New Era in Fast Charging: Let’s Go GaNFast! (Chinese) |
1969/12 (Dec) |
SemiExpo |
|
| A New Era in Fast Charging: Let’s Go GaNFast! (English) |
1969/12 (Dec) |
SemiExpo |
|
| GaNFast Power ICs: The Game-Changer |
1969/12 (Dec) |
PCIM |
|
| GaNFast Power ICs: Past – Present – Future |
1969/12 (Dec) |
PCIM |
|
| GaN Power ICs Drive Fast Charger Innovation and Market Adoption |
1969/12 (Dec) |
SEMICON |
|
| Integrated GaN Power Solution and Application (纳微集成氮化镓电源解决方案及应用) (Chinese) |
1969/12 (Dec) |
eMakerZone |
|
| Gallium Nitride (GaN) Power IC Integration and Application (Chinese) |
1969/12 (Dec) |
Jiwei Wang |
|
| High-Density 65W USB-PD GaN Chargers: Market Demand, Technical Solutions and Pricing |
1969/12 (Dec) |
APEC |
|
| AN011: Thermal Management of NV612x GaNFast Power ICs (gallium nitride) |
1969/12 (Dec) |
Application Note |
|
| Here Come the GaN Chargers (gallium nitride) |
1969/12 (Dec) |
Bodo's Power Conference |
|
| CPSSC 2019 GaNFast Charger Update (gallium nitride) (Chinese) |
1969/12 (Dec) |
CPSSC |
|
| High-Frequency 150W PFC-LLC with GaN Power ICs (gallium nitride) |
1969/12 (Dec) |
CPSSC |
|
| High-Frequency PFC-LLC with GaN Power ICs (gallium nitride) |
1969/12 (Dec) |
CPSSC |
|
| GaNFast Power IC Modeling (gallium nitride) |
1969/12 (Dec) |
CPSSC |
|
| GaN Power ICs Enables a Revolution in AC-DC Adapters (gallium nitride) |
1969/12 (Dec) |
CPSSC |
|
| GaN Power Integrated Circuits |
1969/12 (Dec) |
DRC |
|
| GaN High Density 300W AC-DC Converter |
1969/12 (Dec) |
PCIM |
|
| System integration benefits of GaN Power ICs (gallium nitride) |
1969/12 (Dec) |
PCIM |
|
| Systematic approach to GaN power IC reliability |
1969/12 (Dec) |
APEC |
|
| Study of Magnetics Frequency vs. Efficiency Enables a New Class of High-Density PFC/LLC Converters |
1969/12 (Dec) |
APEC |
|
| GaN Power ICs Enabling Next-Gen ACF for Adapter/Charger Applications |
1969/12 (Dec) |
APEC |
|
| GaN Power IC Adoption Takes Off in Fast Charging Market (gallium nitride) |
1969/12 (Dec) |
APEC |
|
| Capacitors going GaNFast: Opportunities and Challenges in High-Frequency Power Systems |
1969/12 (Dec) |
APEC |
|
| A New 650V GaNFast Half Bridge IC for AC/DC Converter Applications (gallium nitride) |
1969/12 (Dec) |
APEC |
|
| AN010: Thermal Management of GaNFast™ Power ICs |
1969/12 (Dec) |
Application note |
|
| Delivering Performance, Let’s Go GaNFast! |
1969/12 (Dec) |
Bodo's Power Conference |
|
| Reliability Testing and Qualification of GaNPower Integrated Circuits |
1969/12 (Dec) |
PEAC |
|
| GaN Power IC Enable 4x Power Density 150W AC/DC Converter Design |
1969/12 (Dec) |
PEAC |
|
| Monolithic GaN Device Integration Drives Efficiency,Density and Reliability in Power Conversion |
1969/12 (Dec) |
PSMA PTR |
|
| Monolithic GaN Device Integration Drives Efficiency |
1969/12 (Dec) |
PSMA PTR |
|
| GaN Reliability Through Integration and Application Relevant Stress Testing |
1969/12 (Dec) |
APEC |
|
| Design Considerations of Highly-Efficient Active Clamp Flyback Converter Using GaNFast™ Power ICs |
1969/12 (Dec) |
APEC |
|
| GaN Power ICs Enable Next Gen Adapters |
1969/12 (Dec) |
MEPD Taiwan |
|
| GaN Power ICs: Integration Drives Performance |
1969/12 (Dec) |
Bodo's Power Conference |
|
| From Science Fiction to Industry Fact: GaN Power ICs Enable the New Revolution in Power Electronics |
1969/12 (Dec) |
Bodo's Power |
|
| GaN Power ICs: Device Integration Delivers Application Performance |
1969/12 (Dec) |
WiPDA |
|
| GaN Power ICs Enable Next-Generation Power Supplies |
1969/12 (Dec) |
CPSS |
|
| Half-Bridge GaN Power ICs: Performance and Application |
1969/12 (Dec) |
IEEE Xplore |
|
| GaN Power ICs deliver breakthrough system performance with confident project costs and schedules |
1969/12 (Dec) |
PCIM |
|
| GaN Power IC Technology: Past, Present & Future |
1969/12 (Dec) |
ISPSD |
|
| At the Speed of GaN (gallium nitride) |
1969/12 (Dec) |
CPES |
|
| Step Up to Half-Bridge GaN Power ICs |
1969/12 (Dec) |
Bodo's Power |
|
| State-of-the-Art Mobile Charging: Topologies, Technologies and Performance |
1969/12 (Dec) |
APEC |
|
| Single-Stage 6.78 MHz Power-Amplifier Design Using High-Voltage GaN Power ICs for Wireless Charging Applications |
1969/12 (Dec) |
APEC |
|
| Next-generation GaN Isolators / Level-Shifters for High Frequency |
1969/12 (Dec) |
APEC |
|
| Do We Need to Progress Towards GHz Switching in High Power Systems and Applications? |
1969/12 (Dec) |
APEC |
|
| GaN Power ICs at 1 MHz+:Topologies, Technologies and Performance |
1969/12 (Dec) |
APEC |
|
| Active Clamp Flyback Using GaN Power IC for Power Adapter Applications |
1969/12 (Dec) |
APEC |
|
| Take a Practical Path Toward High-Performance Power Conversion |
1969/12 (Dec) |
Electronic Design |
|
| Speed Drives Performance |
1969/12 (Dec) |
WiPDA |
|
| 650V AllGaN™ Power IC for Power Supply Applications (gallium nitride) |
1969/12 (Dec) |
WiPDA |
|
| Monolithic HV GaN Power ICs: Performance and Application |
1969/12 (Dec) |
IEEE Xplore |
|
| Driving For Zero Switching Losses |
1969/12 (Dec) |
PCIM Asia |
|
| Welcome to the Post-Silicon World: Wide Bandgap Powers Ahead |
1969/12 (Dec) |
PCIM |
|
| Make it Easy with GaN Power ICs |
1969/12 (Dec) |
Bodo's Power |
|
| GaN Matures for Industry with Monolithic Power ICs |
1969/12 (Dec) |
Power Electronics Europe |
|
| GaN Power ICs and the High-Frequency Eco-System (gallium nitride) |
1969/12 (Dec) |
PSMA PTR |
|
| Unlocking the Power of GaN |
1969/12 (Dec) |
APEC |
|
| Breaking Speed Limits with GaN Power ICs |
1969/12 (Dec) |
APEC |
|
| Breaking Speed Limits with GaN PowerICs |
1969/12 (Dec) |
IEEE TV |
|
| AN006: QFN Assembly & Rework |
1969/12 (Dec) |
Application note |
|
