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| 以 GaN 与 SiC 技术 重构下一代 800 VDC 数据中心电力基础架构 |
1970/01 (Jan) |
Whitepaper |
|
| Redefining Data Center Power – GaN and SiC Technologies for Next-Gen 800 VDC Infrastructure |
1970/01 (Jan) |
White Paper |
|
| 支持MHz开关频率的650V与1200V的 SMB封装碳化硅MPS™ 二极管 |
1970/01 (Jan) |
Brochure |
|
| MHz Switching Capable 650 V & 1200 V SiC MPS™ Diodes in SMB Package |
1970/01 (Jan) |
Brochure |
|
| 沟槽辅助平面栅的碳化硅MOSFET技术 – Brochure |
1970/01 (Jan) |
Brochure |
|
| Trench-Assisted Planar SiC MOSFET Technology – Brochure |
1970/01 (Jan) |
Brochure |
|
| Trench-Assisted Planar SiC MOSFET Technology |
1970/01 (Jan) |
Article |
|
| AN036: Design Guide for AHB Circuit With Controller NV9801 |
1970/01 (Jan) |
Application Note |
|
| AN038: Paralleling Discrete GeneSiC™ Devices in Half-bridge Configurations for Higher-Power Applications |
1970/01 (Jan) |
Application Note |
|
| GaNSense Motor Drive ICs Integrates Performance, Protection, & Bi-Directional Sensing for Motor Drives |
1970/01 (Jan) |
Power Systems Design |
|
| AN037: Avalanche Capability of SiC MOSFETs |
1970/01 (Jan) |
Application Note |
|
| AN035: Handling and Mounting Instructions for SiCPAK™ Power Modules |
1970/01 (Jan) |
Application Note |
|
| 双向氮化镓开关搭配IsoFast高速驱动器打造单级变换新范式，有效缩减系统体积、成本及复杂度 |
1970/01 (Jan) |
Bodo's Power Systems |
|
| Bi-Directional GaN & IsoFast Revolutionize Power Conversion with Single-Stage BDS Converters |
1970/01 (Jan) |
Bodo's Power Systems |
|
| 80 PLUS® Ruby – The New Efficiency Target for Data Centers |
1970/01 (Jan) |
Power Systems Design |
|
| World’s First 12 kW PSU for Hyper-Scale AI Data Centers using GaN and SiC |
1970/01 (Jan) |
Brochure |
|
| AN025: GaNSense™ Motor Drive ICs |
1970/01 (Jan) |
Application Note |
|
| GaNSense Motor Drive ICs for Home Appliance and Industrial |
1970/01 (Jan) |
Brochure |
|
| 搭载IsoFast双通道隔离式氮化镓驱动器的全球首款量产型650VGaNFast双向氮化镓 功率芯片 |
1970/01 (Jan) |
Brochure |
|
| First Production-Released 650 V Bi-Directional GaNFast Power ICs with IsoFast Dual-Channel Isolated GaN Driver |
1970/01 (Jan) |
Brochure |
|
| SiCPAK™ – Unparalleled Reliability & Efficient High-Temperature Performance |
1970/01 (Jan) |
Brochure |
|
| Trench-Assisted Planar Technology |
1970/01 (Jan) |
Brochure |
|
| AN033 – Board Assembly Guidelines for TOLT package |
1970/01 (Jan) |
Application Note |
|
| AN032: 0 V Turn-Off of Navitas’ 650 V Gen3 ‘Fast’ Trench-Assisted Planar SiC MOSFETs |
1970/01 (Jan) |
Application Note |
|
| 45 W Auxiliary Power Supply Reference Design Using GeneSiC G2R1000MT17J |
1970/01 (Jan) |
Eval Board |
|
| Rising Data Center Power Demands Call for Safer GaN Gates |
1970/01 (Jan) |
Power Systems Design |
|
| Bi-Directional GaNFast™ Switches Open Doors for New High-Performance Topologies |
1970/01 (Jan) |
Bodo's Wide Bandgap Event 2024 |
|
| Driving Electric Motors with GaN Power ICs |
1970/01 (Jan) |
Bodo's Wide Bandgap Event 2024 |
|
| GaN & SiC Technologies Enable Next-Gen AI Data Centers |
1970/01 (Jan) |
Bodo's Wide Bandgap Event 2024 |
|
| Achieving Next Generation Power Density and Efficiency for AI and Hyperscale Data Center PSUs |
1970/01 (Jan) |
White Paper |
|
| The Environmental Footprint of Wide Bandgap Semiconductors Versus Silicon in CRPS PSUs for AI Data Centers |
1970/01 (Jan) |
Electronic Specifier |
|
| Power Delivery Roadmap for AI |
1970/01 (Jan) |
EPD&T |
|
| Power Density in AI Data Center PSUs: How Do We Move Above 100 W/In3 |
1970/01 (Jan) |
Bodo's Power Systems |
|
| Wide Bandgap Goes Mainstream |
1970/01 (Jan) |
EE Power |
|
| GeneSiC Power Devices |
1970/01 (Jan) |
Brochure |
|
| GaNFast Power ICs |
1970/01 (Jan) |
Brochure |
|
| World’s First 8.5 kW PSU for AI Data Centers using only GaN and SiC |
1970/01 (Jan) |
Product Brief |
|
| A Novel Digital Control Strategy for GaN-based Interleaving CrM Totem-pole PFC |
1970/01 (Jan) |
ECCE 2024 |
|
| High-Voltage SiC Accelerates Heavy-Duty EV Trucking |
1970/01 (Jan) |
PowerUP 2024 |
|
| Robust GaN Power ICs Drive into High-Power, High-Reliability Systems |
1970/01 (Jan) |
PowerUP 2024 |
|
| High-Voltage SiC for Storage & MV-Grid Conversion |
1970/01 (Jan) |
Power Electronics World |
|
| AN031: GaNSlim 系列产品用在LLC电路上的设计指导 |
1970/01 (Jan) |
Application Note |
|
| AN031: Design Guide for GaNSlim Serial Products Used in LLC Circuit |
1970/01 (Jan) |
Application Note |
|
| Advances in SiC Technologies Address High-Voltage Electrification Design Challenges |
1970/01 (Jan) |
IEEE |
|
| PCIM 2024 – GaN Wide Bandgap Design the Future of Power (Bodos Panel) |
1970/01 (Jan) |
PCIM 2024 |
|
| Teardown report of Belkin 200W quad USB-C port gallium nitride desktop charger |
1970/01 (Jan) |
chongdiantou |
|
| Bi-Directional GaN Power ICs open up new possibilities in off-grid applications |
1970/01 (Jan) |
PE International 2024 |
|
| 3.3 kV SiC MOSFETs Accelerate Grid-Connected Energy Storage |
1970/01 (Jan) |
PE International 2024 |
|
| Teardown report of Ugreen 200W 4C1A smart charging box Ultra+ |
1970/01 (Jan) |
chongdiantou |
|
| Navitas Delivers AI Server Power: GaN & SiC Hybrid 4.5 kW |
1970/01 (Jan) |
TechTaiwan |
|
| Silicon Carbide MPS Diodes Boost Efficiency and Reliability |
1970/01 (Jan) |
Compound Semiconductor |
|
| Driving up Power Density with GaN |
1970/01 (Jan) |
EPD&T |
|
| Wide Bandgap Power to Electrify Our World for a Sustainable Future |
1970/01 (Jan) |
IEEE |
|
| High-Density Power for the AI Revolution |
1970/01 (Jan) |
EE World Online |
|
| High Density 400 W DC/DC Power Module with Integrated Planar Transformer and Half Bridge GaN IC |
1970/01 (Jan) |
APEC |
|
| High-Voltage SiC Optimized for Megawatt Charging in EV Long-haul Trucking |
1970/01 (Jan) |
APEC |
|
| An Optimization Method for Planar Transformer Winding Losses in GaN Based Multi-Output Flyback Converter |
1970/01 (Jan) |
APEC |
|
| GaN and SiC Based 500kHz Resonant Bi-directional DC/DC Design for 800V OBCM Application (paper) |
1970/01 (Jan) |
APEC |
|
| GaN and SiC Based 500kHz Resonant Bi-directional DC/DC Design for 800V OBCM Application (poster) |
1970/01 (Jan) |
APEC |
|
| “Electrify Our World” with Next-gen GaNFast and GeneSiC Power |
1970/01 (Jan) |
APEC |
|
| GaN Half-Bridge Power IC and AHB/Totem-Pole Topologies Enable 240W, 150cc, PD3.1 Solution with 95.5% Efficiency |
1970/01 (Jan) |
APEC |
|
| Reducing System Cost with GaN FETs in Motor Drive Applications |
1970/01 (Jan) |
APEC |
|
| The SiC Evolution and GaN Revolution for Electric Vehicles |
1970/01 (Jan) |
Power Systems Design |
|
| Traction, Charging and Sustainability – Addressing High-Voltage EV Challenges with SiC |
1970/01 (Jan) |
Design World |
|
| GaN power IC Innovations For High-Frequency, High-Power Industrial Motor Drive |
1970/01 (Jan) |
Bodo's Wide Bandgap Event 2023 |
|
| High-Speed Gen3 Fast GeneSiC MOSFETs Deliver Best-In-Class Performance |
1970/01 (Jan) |
Bodo's Wide Bandgap Event 2023 |
|
| Reliability and Cost-of-Ownership Optimization in Industrial Power Supplies |
1970/01 (Jan) |
Power Semiconductor User Forum 2023 |
|
| A New Generation of GaN Devices to Meet AI Server Power Demands |
1970/01 (Jan) |
Power Systems Design |
|
| SiC-based Bidirectional Three-phase CLLLC Resonant Converter with Integrated Magnetics for High-Power On-Board Charger Applications |
1970/01 (Jan) |
CPSSC |
|
| Next-Generation GaN power ICs Drive Transformer Revolution |
1970/01 (Jan) |
CPSSC |
|
| How the Si to GaN SiC Transition Accelerates Our Journey From Fossil Fuels |
1970/01 (Jan) |
CPSSC |
|
| Empowering Zero Carbon Unleashing the Potential of Navitas GaN in Solar and Energy Storage Systems |
1970/01 (Jan) |
CPSSC |
|
| Successful High-Frequency Applications with SiC |
1970/01 (Jan) |
CPSSC |
|
| 3rd-Gen Device Drives Ultra Power Density CRPS185 3,200 W Titanium Server Design (Chinese) |
1970/01 (Jan) |
CPSSC |
|
| High Power, High Voltage, High Speed: GaN and SiC Electrify Our World™ |
1970/01 (Jan) |
CPSSC |
|
| 纳微GaNsafe™ 驱动超高性能AI服务器电源设计 |
1970/01 (Jan) |
CPSSC |
|
| 采用无损电流采样的高集成GaNSense Control和GaN Halfbridge方案 |
1970/01 (Jan) |
CPSSC |
|
| GaNSafe™ Power ICs Create Highest Density and Efficiency in Data Center & EV Power Systems |
1970/01 (Jan) |
CPSSC |
|
| GaN Power ICs Drive Efficiency and Size Improvements in BLDC Motor Drive Applications |
1970/01 (Jan) |
CPSSC |
|
| Navitas GaNSafe™️ and GeneSiC™️ Double Engine Drive Automotive Power Future |
1970/01 (Jan) |
CPSSC |
|
| Teardown report of GravaStar A65 Bumblebee co-branded gallium nitride charger |
1970/01 (Jan) |
chongdiantou |
|
| 全面保护型半桥功率IC赋能电机集成逆变器 |
1970/01 (Jan) |
Bodo's Power China |
|
| AN022: PCB Layout Recommendations for GeneSiC MOSFETs |
1970/01 (Jan) |
Application Note |
|
| GaNFast: The Power and the Quality |
1970/01 (Jan) |
eBook |
|
| AN030: SPICE Model Usage Instructions |
1970/01 (Jan) |
Application Note |
|
| AN029: Understanding the Datasheet of a SiC Power Schottky Diode |
1970/01 (Jan) |
Application Note |
|
| AN028: SiC Power Diode Reliability |
1970/01 (Jan) |
Application Note |
|
| New-Generation SiC MPS Diodes with low knee voltages |
1970/01 (Jan) |
ICSCRM 2023 |
|
| New-Generation of Trench-Assisted Planar SiC MOSFETs |
1970/01 (Jan) |
ICSCRM 2023 |
|
| Variable-Speed Motor Drives Reap Benefits Of Integrated GaN |
1970/01 (Jan) |
How2Power |
|
| GaNSafe – the World’s Safest GaN Power Semiconductor |
1970/01 (Jan) |
Semicon |
|
| GaNSafe Power ICs Create Highest Density and Efficiency in Data Center and EV Power Systems |
1970/01 (Jan) |
Semicon |
|
| TEGIC NIO Edition 210W GaN Power Station |
1970/01 (Jan) |
ChargerLab |
|
| GeneSiC Digs Deep into Trench Technology |
1970/01 (Jan) |
Navitas |
|
| GaN & SiC: Accelerating Revolutions (Video) |
1970/01 (Jan) |
Aspencore PowerUp 2023 |
|
| GaN & SiC: Accelerating Revolutions (PDF) |
1970/01 (Jan) |
Aspencore PowerUp 2023 |
|
| The Genesis of GeneSiC and the Future of Silicon Carbide |
1970/01 (Jan) |
Bodo's Power Systems |
|
| GaNSense™ Power ICs Integrate Fast, Autonomous, Precise Protection Circuits for Ultimate System Robustness |
1970/01 (Jan) |
Power Systems Design |
|
| AN027: 1200 V SiC JBS Diodes With Ultra-Low Capacitive Reverse Recovery Charge For Fast Switching Applications |
1970/01 (Jan) |
Application Note |
|
| AN026: 1200 V Schottky Diodes With Temperature Invariant Barrier Heights and Ideality Factors |
1970/01 (Jan) |
Application Note |
|
| GaNSense™ Power ICs Enable Next-Gen, Ultra-High-Efficiency and High-Power-Density 140 W, PD3.1 Adapter Designs |
1970/01 (Jan) |
Bodo's Power Systems |
|
| 3.3 kV SiC MOSFETs Accelerate Grid-Connected Energy Storage |
1970/01 (Jan) |
Power Electronics News |
|
| High-Frequency High-Efficiency LLC Module with Planar Matrix Transformer for CPRS Application Using GaN Power IC |
1970/01 (Jan) |
PCIM Europe 2023 |
|
| GaN Power ICs Drive Efficiency and Size Improvements in BLDC Motor Drive Applications |
1970/01 (Jan) |
PCIM Europe 2023 |
|
| GaN Power ICs Enable 300cc 700kHz 300W AC-DC Converter |
1970/01 (Jan) |
PCIM Europe 2023 |
|
| GaN-based High Frequency and High-power Density 2-in-1 Bidirectional OBCM Design for EV Application |
1970/01 (Jan) |
PCIM Europe 2023 |
|
| High-Frequency High-Efficiency LLC Module with Planar Matrix Transformer for CPRS Application Using GaN Power IC |
1970/01 (Jan) |
PCIM Europe 2023 |
|
| GaN Power ICs Drive Efficiency and Size Improvements in BLDC Motor Drive Applications |
1970/01 (Jan) |
PCIM Europe 2023 |
|
| GaN Power ICs Enable 300cc 700kHz 300W AC-DC Converter |
1970/01 (Jan) |
PCIM Europe 2023 |
|
| GaN-based High Frequency and High-power Density 2-in-1 Bidirectional OBCM Design for EV Application |
1970/01 (Jan) |
PCIM Europe 2023 |
|
| AN021: Gate-Driver IC Selection Guidelines for GeneSiC MOSFETs |
1970/01 (Jan) |
Application Note |
|
| An Ultra-High Efficiency High Power Density 140W PD3.1 AC-DC Adapter Using GaN Power ICs |
1970/01 (Jan) |
APEC 2023 |
|
| GeneSiC high-speed, high-voltage SiC drives high-power innovation |
1970/01 (Jan) |
APEC 2023 |
|
| The Past, Present, and Future of Current Sensing |
1970/01 (Jan) |
APEC 2023 |
|
| New GaNSense Half-Bridge IC Enables Next Gen High-Frequency, High-Efficiency, High-Density Topologies |
1970/01 (Jan) |
APEC 2023 |
|
| Pure-Play, High-Speed GaNFast and GeneSiC |
1970/01 (Jan) |
APEC 2023 |
|
| Sustainability Benefits of GaNFast Power ICs |
1970/01 (Jan) |
APEC 2023 |
|
| Efficient 400-800V Charging & Conversion with GaNFast Power ICs & GeneSiC Trench-Assisted Planar-Gate MOSFETs |
1970/01 (Jan) |
Advanced Automotive Tech Forum 2023 |
|
| Beyond Simply Replacing Silicon – System Level Impact of GaN Power ICs in Key Applications |
1970/01 (Jan) |
ECPE 2023 |
|
| AN020: Thermal Simulation Model |
1970/01 (Jan) |
Application Note |
|
| SiC Delivers Next-Generation Efficiency and Sustainability |
1970/01 (Jan) |
Power Systems Design |
|
| Navitas GaNFast™ IC Field Results in High-Volume Production |
1970/01 (Jan) |
Navitas Semiconductor |
|
| Tear Down: Spigen ArcStation™ Pro GaN-based Charger |
1970/01 (Jan) |
Embedded Computing Design |
|
| AN019: New GaNFast™ Half-Bridge Power ICs with GaNSense™ Technology |
1970/01 (Jan) |
Application Note |
|
| Trench-Assisted Planar Gate SiC MOSFET Technology runs 25°C cooler than competition |
1970/01 (Jan) |
Navitas |
|
| Planet Navitas Showcases Tomorrow’s Sustainable World at CES 2023 |
1970/01 (Jan) |
EE Times Asia |
|
| Teardown of Realme 50W Mini SuperDart Charger |
1970/01 (Jan) |
ChargerLab |
|
| Teardown of New Samsung 45W GaN Charger |
1970/01 (Jan) |
ChargerLab |
|
| Teardown of Anker 100W USB-C Charger, 736 Charger (Nano II 100W) |
1970/01 (Jan) |
ChargerLab |
|
| Charging Into The GaNFast Future – Ugreen |
1970/01 (Jan) |
CES 2023 |
|
| The Power of GaNFast Technology on the OnePlus 10T-5G |
1970/01 (Jan) |
CES 2023 |
|
| Anker 767 PowerHouse – GaNPrime 2048Wh | 2400W |
1970/01 (Jan) |
CES 2023 |
|
| Something You Want With Navitas GaN – Spigen |
1970/01 (Jan) |
CES 2023 |
|
| The Silicon Chip is Dead! |
1970/01 (Jan) |
CES 2023 |
|
| Living Well Off the Grid |
1970/01 (Jan) |
CES 2023 |
|
| Electrify Our World |
1970/01 (Jan) |
CES 2023 |
|
| Teardown of Lenovo thinkplus GaN Nano 65W Charger |
1970/01 (Jan) |
ChargerLab |
|
| GaNSense Half-Bridge IC – Programmable Turn-on dV/dt Control |
1970/01 (Jan) |
Navitas |
|
| Teardown of vivo iQOO 200W GaN Charger (For iQOO 10 Pro) |
1970/01 (Jan) |
ChargerLab |
|
| GaNSense Half-Bridge IC – Over-temperature Protection |
1970/01 (Jan) |
Navitas |
|
| Teardown of Lenovo Legion 135W USB-C GaN Charger |
1970/01 (Jan) |
ChargerLab |
|
| Teardown of Motorola Original 125W GaN Charger for MOTO X30 Pro |
1970/01 (Jan) |
ChargerLab |
|
| From 650V to 6.5 kV, GeneSiC MOSFETs Drive Innovation |
1970/01 (Jan) |
Bodo's Wide Bandgap |
|
| Electric motors benefit from GaNFast™ |
1970/01 (Jan) |
Bodo's Wide Bandgap 2022 |
|
| GaNFast Power ICs Maximize Transient Voltage Ratings and Boost Circuit Ruggedness |
1970/01 (Jan) |
Power Systems Design |
|
| GaNSense Half-Bridge IC – Over-Current Protection (OCP) Monitoring |
1970/01 (Jan) |
Navitas |
|
| Pure-Play, Next-Generation Power Semiconductors |
1970/01 (Jan) |
CPSSC |
|
| GaNFast™ Half-Bridge IC and Applications |
1970/01 (Jan) |
CPSSC |
|
| GaNFast™ and GeneSiC™: Twin Engines Drive the Future of High-Power Applications |
1970/01 (Jan) |
CPSSC |
|
| GaN Integration Drives Next-Generation Power Systems |
1970/01 (Jan) |
CPSSC |
|
| GaN-based High Frequency 6.6kW Bi-directional DCDC Converter for OBC Application |
1970/01 (Jan) |
CPSSC |
|
| GaNFast Power ICs maximize transient voltage ratings and boost circuit ruggedness |
1970/01 (Jan) |
Power Systems Design |
|
| GaN Drives Development of Next-Generation EVs |
1970/01 (Jan) |
Power Systems Design |
|
| GaNSense Half-Bridge IC – Autonomous Over-Current Protection (OCP) |
1970/01 (Jan) |
Navitas |
|
| SiC and GaN Applications in Electric Vehicles: Current Issues |
1970/01 (Jan) |
ECCE |
|
| GaN Drives Development of Next-Generation EVs |
1970/01 (Jan) |
Power Systems Design |
|
| GaNSense Half-Bridge IC – Loss-less current sensing monitoring |
1970/01 (Jan) |
Navitas |
|
| Green Engineering Summit: GaN Power ICs Lead the Way to Sustainability |
1970/01 (Jan) |
EE Times |
|
| GaNCam: Overview of NV6247, GaNSense™ Half-Bridge Power IC |
1970/01 (Jan) |
Navitas |
|
| GaNSense Half-Bridge IC – Loss-less current sensing |
1970/01 (Jan) |
Navitas |
|
| GaN ICs Drive Sustainability and Deliver CarbonNeutral Status |
1970/01 (Jan) |
Power Electronics News |
|
| GaNSense Half-Bridge IC – Integrated Protection and Sensing |
1970/01 (Jan) |
Navitas |
|
| Advancing GaN Power ICs: Efficiency, Reliability & Autonomy |
1970/01 (Jan) |
EPE |
|
| GaNSense Half-Bridge IC – Overview |
1970/01 (Jan) |
Navitas |
|
| GaNSense™ 半桥集成技术加速电力电子技术革命 |
1970/01 (Jan) |
EET China |
|
| GaNSense™ Half-Bridge Integration Accelerates the Power-Electronics Revolution |
1970/01 (Jan) |
Power Electronics News |
|
| Current Sensing: Past, Present, and Future |
1970/01 (Jan) |
Electronic Design |
|
| Advancing GaN Power Integration: Efficiency, Reliability & Autonomy |
1970/01 (Jan) |
PowerAmerica |
|
| Teardown of Anker GaNPrime 120W Charger |
1970/01 (Jan) |
ChargerLab |
|
| Vollständig geschützte GaN-Leistungs-ICs sorgen für robuste und kostengünstige Motorantriebe |
1970/01 (Jan) |
Elektronik |
|
| Fully-Protected GaN Power ICs Deliver Robustness and Lower System Costs to Motor Drives |
1970/01 (Jan) |
Elektronik |
|
| TSMC Technology Symposium 2022 |
1970/01 (Jan) |
Presentation |
|
| Unlocking GaN’s Full Potential |
1970/01 (Jan) |
Power Systems Design |
|
| GaN ICs Simplify Designs, Improve Performance and Boost Robustness & Reliability |
1970/01 (Jan) |
White Paper |
|
| Autonomous GaN Power ICs Deliver High-Performance, Reliable Motor Drives |
1970/01 (Jan) |
Power Electronics News |
|
| Bodo’s Panel: The Industry Leader in GaN Power ICs |
1970/01 (Jan) |
PCIM |
|
| 采用了GaNSense™技术的NV6169 PQFN 8×8 GaNFast™功率IC，适用于更高功率的应用 |
1970/01 (Jan) |
Application Note |
|
| AN016: NV6169 PQFN 8×8 GaNFast™ Power IC with GaNSense™ Technology for Higher-Power Applications |
1970/01 (Jan) |
Application Note |
|
| Autonomous GaN Power ICs Deliver High-Performance, Reliable Motor Drives |
1970/01 (Jan) |
White Paper |
|
| Reducing Consumer Electronics’ impact with Gallium Nitride (GaN) Power Semiconductors |
1970/01 (Jan) |
White Paper |
|
| Teardown of Xiaomi 120W USB-C GaN Charger |
1970/01 (Jan) |
ChargerLab |
|
| GaN Reliability: Beyond Performance and Efficiency |
1970/01 (Jan) |
White Paper |
|
| GaNFast™ 20-Year Warranty (Chinese) |
1970/01 (Jan) |
White Paper |
|
| GaNFast™ 20-Year Warranty |
1970/01 (Jan) |
White Paper |
|
| GaN Half-Bridge ICs Enable Next Gen MidPower, Multi-Port, High-Density Charger Topologies |
1970/01 (Jan) |
APEC |
|
| Advancements in GaN Power IC System Integration |
1970/01 (Jan) |
APEC |
|
| Navitas Exhibitor Seminar |
1970/01 (Jan) |
APEC |
|
| GaN Adoption, Market-by-Market |
1970/01 (Jan) |
APEC |
|
| Chinese Sustainability Report 2021 |
1970/01 (Jan) |
White Paper |
|
| Sustainability Report 2021 |
1970/01 (Jan) |
White Paper |
|
| AN015: 具有无损电流检测和自动保护功能的GaNSense™技术的新一代GaNFast™Power ICs |
1970/01 (Jan) |
Application Note |
|
| AN015: New GaNFast™ Power ICs with GaNSense™ Technology Loss-Less Current Sensing & Autonomous Protection |
1970/01 (Jan) |
Application Note |
|
| Bodo’s Wide Bandgap Event: GaNFast™ Power IC Solutions for EV, Solar & Industrial |
1970/01 (Jan) |
Bodo's Wide Bandgap |
|
| Bodo’s Wide Bandgap Event: GaNFast™ Architecture, Performance in High-Power Systems |
1970/01 (Jan) |
Bodo's Wide Bandgap |
|
| Next-Generation Gallium Nitride Semiconductor Accelerates Carbon Neutrality |
1970/01 (Jan) |
Nomura |
|
| Power Up Virtual Expo: Electrify Our World™ |
1970/01 (Jan) |
PowerUP |
|
| Advances in GaN Power ICs: Efficiency, Reliability & Autonomy |
1970/01 (Jan) |
WiPDA |
|
| Electronica South China – Navitas |
1970/01 (Jan) |
Electronica |
|
| Electrifying Our World: The Navitas Quality Journey |
1970/01 (Jan) |
White Paper |
|
| Navitas’ Help Enables GaN-Based Charging for Electric Vehicles |
1970/01 (Jan) |
EE Times |
|
| GaN Technology Enables Fast Electric Charging Systems |
1970/01 (Jan) |
EE Times |
|
| Gallium Nitride (GaN) Enables Next-Generation High-Frequency Circuits |
1970/01 (Jan) |
White paper |
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| Gallium Nitride (GaN) Power ICs: Turning Academic Dreams into Industry Reality |
1970/01 (Jan) |
White Paper |
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| International Women in Engineering Day |
1970/01 (Jan) |
White Paper |
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| Electrify Our World™ |
1970/01 (Jan) |
APEC |
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| Pulsed ACF for Low-Profile GaN Fast Chargers |
1970/01 (Jan) |
APEC |
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| 300W Multi-Mode Totem-pole PFCUsing GaN Power ICs |
1970/01 (Jan) |
APEC |
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| The Future of Power: High-Frequency Systems Enabled by GaN |
1970/01 (Jan) |
Electronica China |
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| Gallium Nitride: Catalyst for the Next Generation of Power |
1970/01 (Jan) |
White paper |
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| Fast Forward to the GaN Data Center |
1970/01 (Jan) |
White paper |
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| GaN: Future Direction & Challenges |
1970/01 (Jan) |
White paper |
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| The GaN Revolution in Fast Charging & Power Conversion |
1970/01 (Jan) |
White paper |
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| The Future of Charging is GaNFast! (English) |
1970/01 (Jan) |
Chongdiantou |
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| 纳微GaNFast：定义快充新未来！(The Future of Charging is GaNFast!) (Chinese) |
1970/01 (Jan) |
Chongdiantou |
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| 纳微氮化镓市场分享及展望A New Era in Fast Charging: Let’s Go GaNFast! (Chinese) |
1970/01 (Jan) |
SemiExpo |
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| A New Era in Fast Charging: Let’s Go GaNFast! (English) |
1970/01 (Jan) |
SemiExpo |
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| GaNFast Power ICs: The Game-Changer |
1970/01 (Jan) |
PCIM |
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| GaNFast Power ICs: Past – Present – Future |
1970/01 (Jan) |
PCIM |
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| GaN Power ICs Drive Fast Charger Innovation and Market Adoption |
1970/01 (Jan) |
SEMICON |
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| Integrated GaN Power Solution and Application (纳微集成氮化镓电源解决方案及应用) (Chinese) |
1970/01 (Jan) |
eMakerZone |
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| Gallium Nitride (GaN) Power IC Integration and Application (Chinese) |
1970/01 (Jan) |
Jiwei Wang |
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| High-Density 65W USB-PD GaN Chargers: Market Demand, Technical Solutions and Pricing |
1970/01 (Jan) |
APEC |
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| AN011: Thermal Management of NV612x GaNFast Power ICs (gallium nitride) |
1970/01 (Jan) |
Application Note |
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| Here Come the GaN Chargers (gallium nitride) |
1970/01 (Jan) |
Bodo's Power Conference |
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| CPSSC 2019 GaNFast Charger Update (gallium nitride) (Chinese) |
1970/01 (Jan) |
CPSSC |
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| High-Frequency 150W PFC-LLC with GaN Power ICs (gallium nitride) |
1970/01 (Jan) |
CPSSC |
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| High-Frequency PFC-LLC with GaN Power ICs (gallium nitride) |
1970/01 (Jan) |
CPSSC |
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| GaNFast Power IC Modeling (gallium nitride) |
1970/01 (Jan) |
CPSSC |
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| GaN Power ICs Enables a Revolution in AC-DC Adapters (gallium nitride) |
1970/01 (Jan) |
CPSSC |
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| GaN Power Integrated Circuits |
1970/01 (Jan) |
DRC |
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| GaN High Density 300W AC-DC Converter |
1970/01 (Jan) |
PCIM |
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| System integration benefits of GaN Power ICs (gallium nitride) |
1970/01 (Jan) |
PCIM |
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| Systematic approach to GaN power IC reliability |
1970/01 (Jan) |
APEC |
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| Study of Magnetics Frequency vs. Efficiency Enables a New Class of High-Density PFC/LLC Converters |
1970/01 (Jan) |
APEC |
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| GaN Power ICs Enabling Next-Gen ACF for Adapter/Charger Applications |
1970/01 (Jan) |
APEC |
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| GaN Power IC Adoption Takes Off in Fast Charging Market (gallium nitride) |
1970/01 (Jan) |
APEC |
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| Capacitors going GaNFast: Opportunities and Challenges in High-Frequency Power Systems |
1970/01 (Jan) |
APEC |
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| A New 650V GaNFast Half Bridge IC for AC/DC Converter Applications (gallium nitride) |
1970/01 (Jan) |
APEC |
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| AN010: Thermal Management of GaNFast™ Power ICs |
1970/01 (Jan) |
Application note |
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| Delivering Performance, Let’s Go GaNFast! |
1970/01 (Jan) |
Bodo's Power Conference |
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| Reliability Testing and Qualification of GaNPower Integrated Circuits |
1970/01 (Jan) |
PEAC |
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| GaN Power IC Enable 4x Power Density 150W AC/DC Converter Design |
1970/01 (Jan) |
PEAC |
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| Monolithic GaN Device Integration Drives Efficiency,Density and Reliability in Power Conversion |
1970/01 (Jan) |
PSMA PTR |
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| Monolithic GaN Device Integration Drives Efficiency |
1970/01 (Jan) |
PSMA PTR |
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| GaN Reliability Through Integration and Application Relevant Stress Testing |
1970/01 (Jan) |
APEC |
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| Design Considerations of Highly-Efficient Active Clamp Flyback Converter Using GaNFast™ Power ICs |
1970/01 (Jan) |
APEC |
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| GaN Power ICs Enable Next Gen Adapters |
1970/01 (Jan) |
MEPD Taiwan |
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| GaN Power ICs: Integration Drives Performance |
1970/01 (Jan) |
Bodo's Power Conference |
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| From Science Fiction to Industry Fact: GaN Power ICs Enable the New Revolution in Power Electronics |
1970/01 (Jan) |
Bodo's Power |
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| GaN Power ICs: Device Integration Delivers Application Performance |
1970/01 (Jan) |
WiPDA |
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| GaN Power ICs Enable Next-Generation Power Supplies |
1970/01 (Jan) |
CPSS |
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| Half-Bridge GaN Power ICs: Performance and Application |
1970/01 (Jan) |
IEEE Xplore |
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| GaN Power ICs deliver breakthrough system performance with confident project costs and schedules |
1970/01 (Jan) |
PCIM |
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| GaN Power IC Technology: Past, Present & Future |
1970/01 (Jan) |
ISPSD |
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| At the Speed of GaN (gallium nitride) |
1970/01 (Jan) |
CPES |
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| Step Up to Half-Bridge GaN Power ICs |
1970/01 (Jan) |
Bodo's Power |
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| State-of-the-Art Mobile Charging: Topologies, Technologies and Performance |
1970/01 (Jan) |
APEC |
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| Single-Stage 6.78 MHz Power-Amplifier Design Using High-Voltage GaN Power ICs for Wireless Charging Applications |
1970/01 (Jan) |
APEC |
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| Next-generation GaN Isolators / Level-Shifters for High Frequency |
1970/01 (Jan) |
APEC |
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| Do We Need to Progress Towards GHz Switching in High Power Systems and Applications? |
1970/01 (Jan) |
APEC |
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| GaN Power ICs at 1 MHz+:Topologies, Technologies and Performance |
1970/01 (Jan) |
APEC |
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| Active Clamp Flyback Using GaN Power IC for Power Adapter Applications |
1970/01 (Jan) |
APEC |
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| Take a Practical Path Toward High-Performance Power Conversion |
1970/01 (Jan) |
Electronic Design |
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| Speed Drives Performance |
1970/01 (Jan) |
WiPDA |
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| 650V AllGaN™ Power IC for Power Supply Applications (gallium nitride) |
1970/01 (Jan) |
WiPDA |
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| Monolithic HV GaN Power ICs: Performance and Application |
1970/01 (Jan) |
IEEE Xplore |
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| Driving For Zero Switching Losses |
1970/01 (Jan) |
PCIM Asia |
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| Welcome to the Post-Silicon World: Wide Bandgap Powers Ahead |
1970/01 (Jan) |
PCIM |
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| Make it Easy with GaN Power ICs |
1970/01 (Jan) |
Bodo's Power |
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| GaN Matures for Industry with Monolithic Power ICs |
1970/01 (Jan) |
Power Electronics Europe |
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| GaN Power ICs and the High-Frequency Eco-System (gallium nitride) |
1970/01 (Jan) |
PSMA PTR |
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| Unlocking the Power of GaN |
1970/01 (Jan) |
APEC |
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| Breaking Speed Limits with GaN Power ICs |
1970/01 (Jan) |
APEC |
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| Breaking Speed Limits with GaN PowerICs |
1970/01 (Jan) |
IEEE TV |
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| AN006: QFN Assembly & Rework |
1970/01 (Jan) |
Application note |
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