Tech Features

ChargerLab: TEGIC NIO Edition 210W GaN Power Station

ChargerLab: TEGIC NIO Edition 210W GaN Power Station

"In 2021, TEGIC, a company that focuses on high-performance fast charging accessories, collaborated with NIO to launch a customized 90W GaN power station, which brought a high-power portable experience to NIO car owners. Recently, TEGIC and NIO have launched...

GeneSiC Digs Deep into Trench Technology

GeneSiC Digs Deep into Trench Technology

Yole Group's SiC MOSFET Comparison Report, covers 37 SiC transistors, demonstrating GeneSiC's unique 'Trench-Assisted Planar-Gate' technology, with the lowest FoMs in the industry! GeneSiC offers a no-compromise, next-generation solution; high-yield manufacturing,...

ChargerLab: Teardown of Realme 50W Mini SuperDart Charger

ChargerLab: Teardown of Realme 50W Mini SuperDart Charger

OPPO’s 50W Mini is a true next-generation GaN fast charger using the latest high-speed topology and enabled by GaNFast Power ICs. A ‘pulsed’ power conversion topology achieves the world’s smallest and thinnest form-factor. Measuring only 82.2 x 39.0 x 10.5 mm (34 cc)...

ChargerLab: Teardown of New Samsung 45W GaN Charger

ChargerLab: Teardown of New Samsung 45W GaN Charger

Samsung’s flagship Galaxy S22 Ultra and S22+ smartphones are the latest-generation flagship smartphones from Samsung. They are supported with the small, powerful 45W Super Fast charger, which has the highest power density of any Samsung charger, enabled by NV6014,...

ChargerLab: Teardown of Lenovo thinkplus GaN Nano 65W Charger

ChargerLab: Teardown of Lenovo thinkplus GaN Nano 65W Charger

The Lenovo 65W USB-C GaN Adapter ushers in a new age of safe, efficient portable charging. Powered by Gallium Nitride (GaN) ICs, this charger is up to 55% smaller, 60% lighter, 30% more power-efficient compared to legacy silicon chargers. With PD 3.0 certification, it...

GaNSense Half-Bridge IC – Programmable Turn-on dV/dt Control

GaNSense Half-Bridge IC – Programmable Turn-on dV/dt Control

During first start-up pulses or during hard-switching conditions, it is desirable to limit the slew rate (dV/dt) of the drain of the low-side GaN power FET during turn-on. This is necessary to reduce EMI or reduce circuit switching noise. To program the turn-on dV/dt...

ChargerLab: Teardown of vivo iQOO 200W GaN Charger (For iQOO 10 Pro)

ChargerLab: Teardown of vivo iQOO 200W GaN Charger (For iQOO 10 Pro)

Vivo’s iQOO 10 high-end flagship smartphone is equipped with a new Snapdragon 8+ processor, 4700 mAh dual-cell battery, and supports both 200W ultra-fast charging and 50W wireless charging. iQ00 10 Pro is the first smartphone with a 200W optimized GaN ultra-fast...

GaNSense Half-Bridge IC – Over-temperature Protection

GaNSense Half-Bridge IC – Over-temperature Protection

GaNSense Half-bridge ICs integrate over-temperature detection and protection (OTP) circuitry to protect the IC against excessively high junction temperatures (TJ). High junction temperatures can occur due to overload, high ambient temperatures, and/or poor thermal...

ChargerLab: Teardown of Lenovo Legion 135W USB-C GaN Charger

ChargerLab: Teardown of Lenovo Legion 135W USB-C GaN Charger

Lenovo’s Legion 5 and 5 Pro Gen 7 laptops are significant gaming machines, featuring AMD Rembrandt Ryzen 9 or Intel 12th-gen Alder Lake Core CPUs, AMD Radeon Vega or NVIDIA RTX GPUs, 32 GB of DDR5 memory, 1 TB of solid-state drive, up to 16” screens with 240...

GaNSense Half-Bridge IC – Over-Current Protection (OCP) Monitoring

GaNSense Half-Bridge IC – Over-Current Protection (OCP) Monitoring

During the on-time of each low-side switching cycle (INH = low, INL = high), should the peak current exceed the internal OCP threshold, then the internal low-side gate drive will turn the low-side GaN power FET off quickly and truncate the low-side on-time period to...

PSD: GaN Drives Development of Next-Generation EVs

PSD: GaN Drives Development of Next-Generation EVs

"The opportunity for GaN in EV traction is enhanced as vehicles are moving to four, independent, ‘in-wheel’ traction motors to eliminate a single motor as a point of total failure. This eliminates mechanical drive-train components, delivers four-wheel drive for...

GaNSense Half-Bridge IC – Autonomous Over-Current Protection (OCP)

GaNSense Half-Bridge IC – Autonomous Over-Current Protection (OCP)

GaNSense Half-bridge ICs integrated over current protection (OCP) provides cycle-by-cycle over-current detection and protection circuitry to protect the low-side GaN power FET against high current levels Find out more in our whitepaper and Application Note AN018:

GaNSense Half-Bridge IC – Loss-less current sensing monitoring

GaNSense Half-Bridge IC – Loss-less current sensing monitoring

GaNSense Half-bridge ICs integrated current sense (VCS) feature shows excellent real-time matching and tracking performance versus inductor current (IL) at 1 A peak current levels for 120 W in an asymmetrical half-bridge (AHB) application circuit during steady-state,...

GaNCam: Overview of NV6247, GaNSense™ Half-Bridge Power IC

GaNCam: Overview of NV6247, GaNSense™ Half-Bridge Power IC

GaNSense half-bridge power ICs integrate two GaN FETs with drive, control, sensing, autonomous protection, and level-shift isolation, to create a fundamental power-stage building block for power electronics. This revolutionary single-package solution reduces component...

GaNSense Half-Bridge IC – Loss-less current sensing

GaNSense Half-Bridge IC – Loss-less current sensing

GaNSense Half-bridge ICs integration of lossless current sensing eliminates external current sensing resistors to increase system efficiency and reduce PCB footprint, eliminate RCS hot-spots. When comparing GaNSense technology versus existing external current sensing...

GaNSense Half-Bridge IC – Integrated Protection and Sensing

GaNSense Half-Bridge IC – Integrated Protection and Sensing

The GaNSense half-bridge IC integrates a rich feature-set of sensing and protection all into a low inductance, thermally enhanced, industry standard PQFN 6x8 package: Loss-less current sensing Autonomous short circuit protection (<30 ns) Overtemperature protection...

GaNSense Half-Bridge IC – Overview

GaNSense Half-Bridge IC – Overview

GaNSense half-bridge power ICs integrate two GaN FETs with drive, control, sensing, autonomous protection, and level shift isolation, to create a fundamental power-stage building block for power electronics. This revolutionary single component solution reduces...

ChargerLab: Teardown of Anker GaNPrime 120W Charger

ChargerLab: Teardown of Anker GaNPrime 120W Charger

Navitas NV6136A delivers maximum efficiency in PFC stage for Anker’s GaNPrime Charger family. Navitas’ latest family of GaNFast Power ICs with GaNSense technology integrate control, drive, sensing and protection features for high density charger and adapter...

Power Systems Design: Unlocking GaN’s Full Potential

Power Systems Design: Unlocking GaN’s Full Potential

“GaNFast™ Power ICs, with integrated drive, control and protection, enable the design of next generation high-density power converters without the difficulties associated with high-frequency switching environments, ‘hidden’ parasitic networks, and gate drive ringing...

ChargerLab: Teardown of Xiaomi 120W USB-C GaN Charger

ChargerLab: Teardown of Xiaomi 120W USB-C GaN Charger

“It only takes 15 mins to fully charge some Xiaomi smartphones, such as the Redmi Note pro 11+” “The switching transistor of PFC boost comes from Navitas NV6134. This is a GaN IC with highly integrated drive and protection circuit”

EE Times: Eggtronic Enables GaN-Based Charging for Electric Vehicles

EE Times: Eggtronic Enables GaN-Based Charging for Electric Vehicles

E2Watt, a patented AC wireless power hybrid technology from Eggtronic is designed to increase the power and efficiency of wireless charging applications for home and automotive applications. Igor Spinella, CEO & founder of Eggtronic highlights their new hybrid...