by Navitas | Jun 8, 2026 | Latest-News, Press-Releases
Direct-cooled thermal management offered by a reflow-compatible, isolated thermal pad significantly improves power density, reliability, and efficiency. Integrated aluminum nitride substrate-based isolation reduces electromagnetic coupling, allowing higher switching...
by Navitas | Jun 3, 2026 | AI PR, Latest-News, Press-Releases
TORRANCE, CA – Jun 3rd, 2026 — Navitas Semiconductor (Nasdaq: NVTS), an industry leader in next-generation GaNFast™ gallium nitride (GaN) and GeneSiC™ silicon carbide (SiC) power semiconductors, was honored to participate in NVIDIA’s Partner Ceremony held on May...
by Navitas | May 21, 2026 | IR-Financial, Latest-News, Press-Releases
TORRANCE, Calif., May 21, 2026 – Navitas Semiconductor, (Nasdaq: NVTS), an industry leader in next-generation GaNFast™ gallium nitride (GaN) and GeneSiC™ silicon carbide (SiC) power semiconductors, today announced that Chris Allexandre, CEO, and Tonya Stevens,...
by Navitas | May 18, 2026 | IR, Latest-News, Press-Releases
Highlights include two SST solutions for converting the MV grid to 800V HV DC, a 10 kW, 800 V-to-50 V DC-DC full-brick platform, along with a 20 kW 800 V-to-6 V power delivery board for AI data center. TORRANCE, CA – May 18th, 2026 — Navitas Semiconductor (Nasdaq:...
by Navitas | May 7, 2026 | IR-Financial, Latest-News, Press-Releases
Torrance, Calif., May 07, 2026 – Navitas Semiconductor, (Nasdaq: NVTS), an industry leader in next-generation GaNFast™ gallium nitride (GaN) and GeneSiC™ silicon carbide (SiC) power semiconductors, today announced that Chris Allexandre, CEO, and Tonya Stevens,...
by Navitas | May 6, 2026 | Front-Page, IR, IR, IR-Financial, Latest-News, Press-Releases
Revenue grew 18% sequentially with expanded gross margin, driven by increased contribution from high-power markets, including AI Data Centers, Grid and Energy Infrastructure, Performance Computing and Industrial Electrification High-power markets represented a large...
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