by Navitas | Jul 8, 2026 | Latest-News, Press-Releases
TORRANCE, Calif., July 8, 2026 – Navitas Semiconductor, (Nasdaq: NVTS), the industry leader in next-generation GaNFast™ gallium nitride (GaN) and GeneSiC™ silicon carbide (SiC) power semiconductors, today issued the following statement regarding the patent...
by Navitas | Jul 6, 2026 | IR-Financial, Latest-News, Press-Releases
TORRANCE, Calif., July 6, 2026 – Navitas Semiconductor (Nasdaq: NVTS) today announced that it will report second quarter 2026 financial results on Monday, July 27, 2026, after the market close. Navitas’ President and CEO, Chris Allexandre, and CFO, Tonya Stevens, will...
by Navitas | Jun 8, 2026 | Latest-News, Press-Releases
Direct-cooled thermal management offered by a reflow-compatible, isolated thermal pad significantly improves power density, reliability, and efficiency. Integrated aluminum nitride substrate-based isolation reduces electromagnetic coupling, allowing higher switching...
by Navitas | Jun 3, 2026 | AI PR, Latest-News, Press-Releases
TORRANCE, CA – Jun 3rd, 2026 — Navitas Semiconductor (Nasdaq: NVTS), an industry leader in next-generation GaNFast™ gallium nitride (GaN) and GeneSiC™ silicon carbide (SiC) power semiconductors, was honored to participate in NVIDIA’s Partner Ceremony held on May...
by Navitas | May 21, 2026 | IR-Financial, Latest-News, Press-Releases
TORRANCE, Calif., May 21, 2026 – Navitas Semiconductor, (Nasdaq: NVTS), an industry leader in next-generation GaNFast™ gallium nitride (GaN) and GeneSiC™ silicon carbide (SiC) power semiconductors, today announced that Chris Allexandre, CEO, and Tonya Stevens,...
by Navitas | May 18, 2026 | IR, Latest-News, Press-Releases
Highlights include two SST solutions for converting the MV grid to 800V HV DC, a 10 kW, 800 V-to-50 V DC-DC full-brick platform, along with a 20 kW 800 V-to-6 V power delivery board for AI data center. TORRANCE, CA – May 18th, 2026 — Navitas Semiconductor (Nasdaq:...
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