by Navitas | Dec 19, 2023 | Front Page, IR, IR Financial, Latest News, Press Releases
Customer pipeline Up 65% to $1.25B, target to Grow 6x-10x market rate, with leading-edge GaN & SiC Torrance, CA., USA, December 19th, 2023 — Navitas Semiconductor (Nasdaq: NVTS), the only pure-play, next-generation power semiconductor company and industry...
by Navitas | Dec 8, 2023 | Front Page, IR, Latest News, Press Releases
From EVs to AI data centers, and renewables to mobile fast charging, next-gen GaN and SiC replace legacy silicon chips in a diverse $22B/yr market Torrance, CA – December 8th, 2023—Navitas Semiconductor (Nasdaq: NVTS), the only pure-play, next-generation power...
by Navitas | Dec 7, 2023 | EV PR, Front Page, Latest News, Press Releases
Next-gen GaNFast™ technology charges NIO’s first ever phone, with optimized “Vehicle-to-Person” (V2P) integration Torrance, Calif., Dec. 07, 2023 – Navitas Semiconductor (Nasdaq: NVTS) announced that NIO, a global, leading, new-energy vehicle...
by Navitas | Dec 6, 2023 | Front Page, IR, IR Financial, Latest News, Press Releases
Ranking recognizes growth driven by strong demand for next-gen GaN and SiC power semis in EV, solar, appliance / industrial, data center and mobile Torrance, CA., USA, December 6th, 2023: Navitas Semiconductor (Nasdaq: NVTS), the pure-play industry leader in...
by Navitas | Dec 1, 2023 | Front Page, IR, Latest News, Press Releases
Next-generation gallium nitride (GaN) and silicon carbide (SiC) technologies replace legacy silicon chips in high-performance motor drive, on-board & roadside chargers, solar inverters and energy storage systems, from 20 W to 20 MW. Torrance, CA., USA, December...
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