by Navitas | Mar 22, 2017 | Latest News
Navitas CEO champions high-frequency roadmap for GaN Power ICs at APEC rap session on Mar 27th.
by Navitas | Mar 13, 2017 | In the Media
The debut article on the world’s first half-bridge GaN Power ICs explores the new world of high-frequency power conversion. Half-bridge circuits are essential building blocks in the power electronics industry, used in everything from smartphone chargers and...
by Navitas | Mar 9, 2017 | Latest News, Press Releases
[vc_row][vc_column][vc_column_text] English Translation: Navitas Announces Significant GaN Power IC Coverage at APEC 2017 业界首创氮化镓 (GaN) 功率 IC 在高密度, 高效率转换器方面树立了新标准 EL SEGUNDO, Calif.–(PRWeb) Navitas （音译:纳微） 半导体公司今天宣布，公司将在 2017 年 3 月 26...
by Navitas | Mar 8, 2017 | Latest News, Press Releases
[vc_row][vc_column][vc_column_text] Chinese Translation: Navitas将在2017年APEC公布重要的氮化镓(GaN)功率IC消息 Industry-first GaN Power ICs set a new standard in high-density, high-efficiency converters. EL SEGUNDO, Calif.–(PRWeb)–Navitas Semiconductor announced today...
by Navitas | Mar 2, 2017 | In the Media
Navitas CEO, Gene Sheridan, shares his view on a major shift in power electronics after the industry’s 30-year plateau. The combination of resonant topologies, fast GaN transistors and GaN analog integration completes the needed trifecta for extraordinary...
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