by Navitas | Aug 1, 2024 | AI PR, EV PR, Front Page, Latest News, Press Releases
3rd gen 650 V ‘fast’ silicon carbide (SiC) MOSFETs deliver highest power density in robust, thermally enhanced packaging for critical, high-reliability, high-efficiency applications Torrance, CA – August 1st, 2024 — Navitas Semiconductor (Nasdaq: NVTS), the industry...
by Navitas | Jul 25, 2024 | AI PR, Data Center PR, Front Page, IR, Latest News, Press Releases
Navitas delivers efficient 4.5 kW power in the smallest power-supply form-factor for latest AI GPUs that demand 3x more power per rack Torrance, CA – July 25th, 2024 — Navitas Semiconductor (Nasdaq: NVTS), the industry leader in next-generation GaNFast™ gallium...
by Navitas | Jun 6, 2024 | AI PR, Data Center PR, EV PR, Front Page, IR, Latest News, Press Releases, Product Release
World-leading performance over temperature enables cool-running, fast-switching 650 V and 1,200 V SiC MOSFETs to support up to 3x more powerful AI data centers and faster charging EVs Torrance, CA – June 6th, 2024— Navitas Semiconductor (Nasdaq: NVTS), the...
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