by Navitas | Nov 30, 2021 | Front Page, IR, IR Financial, Latest News, Press Releases
$30 million converted to unrestricted cash on the balance sheet El Segundo, CA – November 30th, 2021— Navitas Semiconductor (Nasdaq: NVTS), the industry-leader in gallium nitride (GaN) power integrated circuits (ICs) announced the conclusion of a prepaid,...
by Navitas | Nov 29, 2021 | Front Page, IR, IR Financial, Latest News, Press Releases, Xiaomi
Generation 3 GaN power ICs selected to support new ultrafast mobile charging category El Segundo, CA: November 29th, 2021: Navitas Semiconductor today announced details of how its gallium nitride (GaN) semiconductors – GaNFast™ power ICs with GaNSense™...
by Navitas | Nov 19, 2021 | Front Page, In the Media, Latest News, Short post
“It is becoming clear that Silicon now has a significant challenger in mainstream power applications as the emergence of Gallium Nitride, or GaN, is changing the way designers think about their power electronics designs. As well as helping to improve efficiency...
by Navitas | Nov 19, 2021 | Front Page, In the Media, Latest News, Short post
“Navitas is in a league of their own.” GaN-on-Si industry expert, Mikhail Guz of iPTE was interviewed by Mark Lipacis, Equity Analyst at Jefferies on Nov 17th, 2021, with a detailed, insider view of gallium nitride (GaN) technology, application advantages,...
by Navitas | Nov 19, 2021 | Awards, Front Page, IR, IR Financial, Latest News, Press Releases
GaN power ICs replace legacy silicon chips to enable world’s smallest, fastest mobile chargers El Segundo, CA – November 19th, 2021 — Navitas Semiconductor (Nasdaq: NVTS), the industry-leader in gallium nitride (GaN) power integrated circuits (ICs) has announced that...
Recent Comments