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Navitas Semiconductor CEO Keynote Presenter at Prestigious IEEE Event

by Navitas | Nov 2, 2016 | Latest News, Press Releases

Navitas Semiconductor today announced CEO Gene Sheridan will present the advantages of the world’s first Gallium Nitride (GaN) Power ICs, using its proprietary AllGaN™ technology at the upcoming IEEE Power Electronics Society 4th IEEE Workshop on Wide Bandgap Power...

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  • Week In Review: Design, Low Power on Navitas Semiconductor, the Industry Leader in Gallium Nitride (GaN) Power ICs, to Go Public at an Enterprise Value of $1.04 Billion via Live Oak II SPAC Business Combination

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Navitas Semiconductor was formed in 2014 to enable a high-speed revolution in power electronics. We are making this revolution possible with the invention of the industry’s first Gallium Nitride (GaN) power ICs which enable up to a 100x increase in switching speeds while increasing energy savings by 3x or more.

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  • TSMC and Navitas: Partners in GaN for Efficiency & Sustainability 1st July 2022
  • Navitas Powers Xiaomi’s First In-Box GaN 100 W Laptop Fast Charger  29th June 2022
  • Mint Lounge: The Tech Behind Fast Charging 23rd June 2022
  • Power Systems Design: Unlocking GaN’s Full Potential 17th June 2022
  • Navitas and Anker Celebrate CES Innovation Awards with 100W GaNFast™ Charger 16th June 2022

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