by Navitas | Nov 30, 2022 | Consumer PR, Front Page, IR, Latest News, Mobile PR, Press Releases, Xiaomi
High-speed GaNFast™ ICs enable high-power 210 W charger to achieve 1-100% in just 9 minutes Torrance, CA, USA – November 29th, 2022—Navitas Semiconductor (Nasdaq: NVTS), the only pure-play, next-gen power semiconductor company announced its next-gen GaNFast power ICs...
by Navitas | Nov 29, 2022 | Short post, Tech Features
During the on-time of each low-side switching cycle (INH = low, INL = high), should the peak current exceed the internal OCP threshold, then the internal low-side gate drive will turn the low-side GaN power FET off quickly and truncate the low-side on-time period to...
by Navitas | Nov 28, 2022 | Front Page, IR, Latest News, Press Releases
Leading-edge gallium nitride (GaN) and silicon carbide (SiC) technologies rapidly taking share from legacy silicon chips in $22B/yr market opportunity Torrance, CA, USA – November 28th, 2022— Navitas Semiconductor (Nasdaq: NVTS), the only pure-play,...
by Navitas | Nov 28, 2022 | Front Page, IR, IR Financial, Latest News, Press Releases
Navitas recently ranked 75th fastest-growing company in North America on the 2022 Deloitte Technology Fast 500™, continued growth advances mission to “Electrify Our World™” Torrance, CA., November 28th, 2022—Navitas Semiconductor (Nasdaq: NVTS), the only pure-play,...
by Navitas | Nov 28, 2022 | Front Page, IR, IR Financial, Latest News, Press Releases
GaNSense™ half-bridge ICs enable highest efficiency and most compact designs for motor drive systems, while GeneSiC™ MOSFETs drives high-power system innovation Torrance, CA – November 28th, 2022— Navitas Semiconductor (Nasdaq: NVTS), the only pure-play,...
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