by Navitas | Mar 25, 2021 | Front Page, Latest News
40 years after the silicon bipolar junction transistor gave way to the switching silicon MOSFET, we are seeing the ‘second revolution’ in power electronics, with gallium nitride (GaN) as the enabling catalyst. Smartphone screens, batteries and increased 5G features...
by Navitas | Mar 24, 2021 | Front Page, Latest News, Press Releases
Gallium nitride (GaN) power ICs replace old silicon chips in LG gram 16” laptop fast charger. DUBLIN, IRELAND –(PRWeb)— Navitas Semiconductor today announced that LG Electronics has adopted new gallium nitride (GaN) technology for the first time, using Navitas...
by Navitas | Mar 23, 2021 | Front Page, Latest News, Press Releases
Gallium Nitride (GaN) power ICs adopted by LG Electronics for Gram Notebook. As laptops and smartphones get more powerful yet thinner and lighter, it’s time for fast chargers to upgrade from old, slow and heavy silicon ‘bricks’ to new, fast and lightweight gallium...
by Navitas | Mar 15, 2021 | Front Page, Latest News, Press Releases, Xiaomi
Xiaomi’s First In-box GaNFast Charger is a World-Class Charging Experience. DUBLIN, IRELAND — (PRWeb) – Navitas Semiconductor Limited today announced that its gallium nitride (GaN) power ICs are being used in the Xiaomi 55W fast charger (model MDY-12-EQ),...
by Navitas | Mar 8, 2021 | Front Page, Latest News
Navitas Semiconductor has launched a 650V integrated gallium nitride GaN power chip with peak 800V operation for 500W chargers. The NV6128 GaNFast power IC is a monolithic integration of FET, drive and logic in a 6 x 8 mm PQFN package for high-power...
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