by Navitas | Mar 28, 2022 | Front Page, In the Media, IR, IR Financial, Latest News, Short post
“Navitas Semiconductor has announced a breakthrough 20-year limited warranty for its GaNFast technology – 10x longer than typical silicon, SiC or discrete GaN power semiconductors – and a critical accelerator for GaN’s adoption in data center, solar and EV...
by Navitas | Mar 21, 2022 | Front Page, IR, IR Financial, Latest News, Press Releases
Sets new standard for power semiconductors as GaN ICs enter Data Center, Solar and EV high-reliability markets El Segundo, CA, USA – March 21, 2022— Navitas Semiconductor (Nasdaq: NVTS), the industry-leader in gallium nitride (GaN) power integrated circuits has...
by Navitas | Mar 21, 2022 | Front Page, IR, IR Financial, Latest News, Press Releases
Zero reported GaN-related field failures sets unprecedented industry benchmark El Segundo, CA, USA – March 21st, 2022— Navitas Semiconductor (Nasdaq: NVTS), the industry-leader in gallium nitride (GaN) power integrated circuits has announced a breakthrough 40M...
by Navitas | Mar 14, 2022 | Front Page, IR, IR Financial, Latest News, Press Releases
Next-gen semiconductor powers flagship Galaxy S22 Ultra and S22+ smartphones El Segundo, CA, USA – March 14th, 2022— Navitas Semiconductor (Nasdaq: NVTS), the industry-leader in gallium nitride (GaN) power integrated circuits has announced that its GaNFast...
by Navitas | Mar 11, 2022 | Front Page, IR, IR Financial, Latest News, Press Releases, Xiaomi
Next-gen GaNFast™ ICs power 120W ‘in-box’ ultra-fast charger at top speed: 0-100% in only 17 minutes El Segundo, CA: March 11th, 2022: Navitas Semiconductor (Nasdaq: NVTS) – the leader in gallium nitride (GaN) power ICs – today officially announced that its...
Recent Comments