by Navitas | Dec 31, 2021 | Front Page, IR, IR Financial, Latest News, Press Releases
CEO Gene Sheridan to highlight performance and environmental benefits of next-gen GaN power ICs in EV, solar and data center markets El Segundo, CA – December 31st, 2021— Navitas Semiconductor (Nasdaq: NVTS), the industry-leader in gallium nitride (GaN)...
by Navitas | Dec 23, 2021 | IR, IR Financial, Latest News, Press Releases
Gallium nitride (GaN) positioned to expand from mobile fast chargers to consumer, EV, solar and data center markets El Segundo, CA – December 23rd, 2021 — Navitas Semiconductor (Nasdaq: NVTS), the industry-leader in GaN power integrated circuits (ICs) has announced...
by Navitas | Dec 23, 2021 | CES2022, Front Page, IR, IR Financial, Latest News, Press Releases
700V-rated GaNFast™ power ICs with GaNSense™ technology enable even higher efficiencies and reliability El Segundo, CA – December 23rd, 2021 — Navitas Semiconductor (Nasdaq: NVTS), the industry-leader in gallium nitride (GaN) power integrated circuits (ICs) announced...
by Navitas | Dec 20, 2021 | Front Page, In the Media, IR, IR Financial, Latest News, Short post
“Gallium nitride (GaN) is beginning to show up across a broad range of power semiconductor applications due to its wide bandgap, enabling fast-charging, very high speeds, and much smaller form factors than silicon-based chips.” Stephen Oliver, VP Corporate...
by Navitas | Dec 17, 2021 | Front Page, IR, IR Financial, Latest News, Press Releases
Gallium Nitride delivers size, weight and CO2-reduction benefits to Dell users El Segundo, CA – December 17th, 2021 — Navitas Semiconductor (Nasdaq: NVTS), the industry-leader in gallium nitride (GaN) power integrated circuits (ICs) announced that its GaNFast...
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