by Navitas | Jan 31, 2023 | Awards, Front Page, IR, IR Financial, IR Financial, Latest News, Press Releases
Proprietary GaN-IC technology integrates two GaN FETs with drive, control, sensing, autonomous protection, and level-shift isolation to create a fundamental power-stage building block for power electronics Torrance, CA – January 31st, 2023 – Navitas...
by Navitas | Jan 30, 2023 | Tech Features, Tech Features V2
SiC MOSFETs offer superior conductivity and switching performance compared to silicon due to their ‘wide bandgap characteristics and high electric-field strength. However, traditional designs using legacy planar or trench techniques must compromise between...
by Navitas | Jan 26, 2023 | Front Page, IR, Latest News, Press Releases, Solar PR
Navitas’ GeneSiC silicon carbide (SiC) MOSFETs simplify design, expand market size for 4.6 kW KATEK solar inverters Torrance, CA., USA, and Memmingen, Germany, January 27th, 2023— Navitas Semiconductor (Nasdaq: NVTS), and KATEK GROUP (FRA: KTEK) announce that KATEK’s...
by Navitas | Jan 20, 2023 | CES23Feat, Front Page, In the Media, Latest News, Short post
Just a few years ago, people asked when GaN would happen. And now, when GaN is already here, it’s probably a bit late to join the GaN party. Navitas is one of the few GaN device specialists that are now part of this power electronics market disruption. The year 2023...
by Navitas | Jan 19, 2023 | Front Page, IR, IR Financial, Latest News, Press Releases
Strategic silicon control IC capability expected to accelerate next-generation GaN and SiC share gains vs. legacy silicon power devices across a broad range of markets Torrance, CA – January 19th, 2023—Navitas Semiconductor (Nasdaq: NVTS), the only pure-play,...
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