by Navitas | Dec 29, 2022 | Short post, Tech Features
The Lenovo 65W USB-C GaN Adapter ushers in a new age of safe, efficient portable charging. Powered by Gallium Nitride (GaN) ICs, this charger is up to 55% smaller, 60% lighter, 30% more power-efficient compared to legacy silicon chargers. With PD 3.0 certification, it...
by Navitas | Dec 28, 2022 | CES23Feat, Front Page, IR, IR Financial, Latest News, Press Releases
Leading consumer brands Anker, OnePlus, Spigen and Ugreen highlight the latest smartphone and laptop charging benchmarks enabled by next-generation GaN power ICs Torrance, CA – December 28th, 2022—Navitas Semiconductor (Nasdaq: NVTS), the only pure-play,...
by Navitas | Dec 20, 2022 | Short post, Tech Features
During first start-up pulses or during hard-switching conditions, it is desirable to limit the slew rate (dV/dt) of the drain of the low-side GaN power FET during turn-on. This is necessary to reduce EMI or reduce circuit switching noise. To program the turn-on dV/dt...
by Navitas | Dec 15, 2022 | Short post, Tech Features
Vivo’s iQOO 10 high-end flagship smartphone is equipped with a new Snapdragon 8+ processor, 4700 mAh dual-cell battery, and supports both 200W ultra-fast charging and 50W wireless charging. iQ00 10 Pro is the first smartphone with a 200W optimized GaN ultra-fast...
by Navitas | Dec 13, 2022 | Short post, Tech Features
GaNSense Half-bridge ICs integrate over-temperature detection and protection (OTP) circuitry to protect the IC against excessively high junction temperatures (TJ). High junction temperatures can occur due to overload, high ambient temperatures, and/or poor thermal...
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