Navitas Semiconductor has launched a 650V integrated gallium nitride GaN power chip with peak 800V operation for 500W chargers.
The NV6128 GaNFast power IC is a monolithic integration of FET, drive and logic in a 6 x 8 mm PQFN package for high-power mobile and consumer power designs. The 70 mOhm NV6128 represents a 66 percent increase in current capability over the previous version with a proprietary, integrated cooling pad on the package for high-efficiency, high-density power systems.
Navitas Semiconductor Limited. is the world’s first and only GaN Power IC company, founded in 2014. Navitas has a strong and growing team of power semiconductor industry experts with a combined 300 years of experience in materials, devices, applications, systems and marketing, plus a proven record of innovation with over 300 patents among its founders. GaN power ICs integrate GaN power with drive, control and protection to enable faster charging, higher power density and greater energy savings for mobile, consumer, enterprise, eMobility and new energy markets. Over 120 Navitas patents are issued or pending, and over 13 million GaNFast power ICs have been shipped with zero failures.