40 years after the silicon bipolar junction transistor gave way to the switching silicon MOSFET, we are seeing the ‘second revolution’ in power electronics, with gallium nitride (GaN) as the enabling catalyst. 

Smartphone screens, batteries and increased 5G features with intensified data processing and transmission rates and volumes have put a spotlight on charging speeds and the size, weight and cost of leading-edge travel adapters.

 GaN power ICs integrate GaN power with drive, control and protection to enable faster charging, higher power density and greater energy savings for mobile, consumer, enterprise, eMobility and new energy markets.