by Navitas | Sep 6, 2023 | Data Center PR, EV PR, Front Page, IR, Latest News, Press Releases, Solar PR
Next-gen, integrated GaN platform sets new, enabling industry benchmarks in efficiency, density & reliability for demanding applications Torrance, CA., USA, September 6th, 2023— Navitas Semiconductor (Nasdaq: NVTS), announced the world-wide launch of GaNSafe™, a...
by Navitas | Jan 7, 2022 | Front Page, IR, IR Financial, Latest News, Press Releases
Navitas and Powerland partner to deliver world’s thinnest, lightest 50W GaNFast charger El Segundo, California: January 7th, 2022: Navitas Semiconductor announced today that its GaNFast™ gallium nitride (GaN) ICs power OPPO’s new 50W ultra-thin and ultra-fast ‘League...
by Navitas | Nov 4, 2021 | CES2022, Front Page, IR, IR Financial, Latest News, Press Releases
Gallium nitride (GaN) positioned to expand from mobile fast chargers to EV, solar, and data center markets El Segundo, CA – November 4, 2021— Navitas Semiconductor (Nasdaq:NVTS), the industry-leader in gallium nitride (GaN) power integrated circuits (“ICs”)...
by Navitas | Jan 12, 2021 | CES2021, In the Media, Latest News, Short post
OPPO is the world’s leading fast-charging phone company and includes the OnePlus and realme brands. In July 2020, Navitas presented OPPO with a 150mm diameter gallium nitride (GaN) wafer award to celebrate the 5,000,000th GaNFast power IC shipment with zero failures....
by Navitas | Aug 10, 2020 | Latest News
OPPO’s “50W Mini SuperVOOC” fast charger, announced on July 15th 2020, uses Navitas’ high-speed GaNFast power ICs to enable a new ‘pulsed’ power conversion topology and achieve the world’s smallest and thinnest form-factor. Measuring only 82.2 x 39.0 x 10.5 mm (34 cc)...
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