Gallium nitride (GaN) positioned to expand from mobile fast chargers to EV, solar, and data center markets
El Segundo, CA – November 4, 2021— Navitas Semiconductor (Nasdaq:NVTS), the industry-leader in gallium nitride (GaN) power integrated circuits (“ICs”) has announced that it will take part in Baird’s 2021 Global Industrial Conference on November 11th.
GaN is a next-generation semiconductor technology that runs up to 20x faster than legacy silicon and enables up to 3x more power and 3x faster charging in half the size and weight. Navitas’ GaNFast™ power ICs integrate GaN power and drive plus protection and control to deliver simple, small, fast and efficient performance. With over 130 patents issued or pending, and significant trade secrets including a proprietary process design kit (PDK), Navitas believes it has a multi-year lead in next-generation GaN power ICs.
Combining presentations with breakout sessions and one-on-one meetings, the 51st annual Baird Industrial Conference provides investors with an opportunity to connect with senior executives from over 275 leading public and private corporations. This year the conference will be a virtual event held 9th-11th November. To register, click here.
At the conference, Navitas’ senior executives will highlight how next-generation GaN power ICs – rather than legacy silicon chips – will play a key role in addressing efficiency demands in markets ranging from electric vehicles to data centers and renewable energy.
“The Baird conference is a great opportunity to highlight the initial $2B mobile fast charger market for GaN and the multi-$B higher-power expansion markets,” said Navitas CEO and co-founder Gene Sheridan. “The EV market is one example – at ~$2,5B/yr and over $250 GaN content per vehicle, there is a significant financial reward to match the growing environmental benefits. Each GaN power IC reduces CO2 emissions by 4 kg compared to a legacy silicon chip, achieving an estimated 2.6 Gton/yr CO2 saving by 2050 as we work to “Electrify Our World™”.
Baird is an employee-owned, international wealth management, asset management, investment banking/capital markets, and private equity firm with offices in the United States, Europe and Asia. Established in 1919, Baird has approximately 4,600 associates serving the needs of individual, corporate, institutional and municipal clients. Baird has more than $355 billion in client assets as of December 31, 2020. Committed to being a great place to work, Baird ranked No. 32 on the Fortune 100 Best Companies to Work For® list in 2021 – its 18h consecutive year on the list. Baird is the marketing name of Baird Financial Group. Baird’s principal operating subsidiaries are Robert W. Baird & Co. Incorporated and Baird Trust Company in the United States and Robert W. Baird Group Ltd. in Europe. Baird also has an operating subsidiary in Asia supporting Baird’s investment banking and private equity operations.
Navitas Semiconductor (Nasdaq:NVTS) is the industry leader in GaN power ICs, founded in 2014. GaN power ICs integrate GaN power with drive, control and protection to enable faster charging, higher power density and greater energy savings for mobile, consumer, enterprise, eMobility and new energy markets. Over 130 Navitas patents are issued or pending, and over 30 million GaNFast power ICs have been shipped with zero reported GaN field failures. Navitas rang the Nasdaq opening bell and started trading on Nasdaq on October 20th, 2021, with an enterprise value over $1B and over $320M gross capital raise.
Navitas Semiconductor, GaNFast and the Navitas logo are trademarks or registered trademarks of Navitas Semiconductor. All other brands, product names and marks are or may be trademarks or registered trademarks used to identify products or services of their respective owners.
Stephen Oliver, VP Corporate Marketing & Investor Relations