by Navitas | Mar 14, 2022 | Front Page, IR, IR Financial, Latest News, Press Releases
Next-gen semiconductor powers flagship Galaxy S22 Ultra and S22+ smartphones El Segundo, CA, USA – March 14th, 2022— Navitas Semiconductor (Nasdaq: NVTS), the industry-leader in gallium nitride (GaN) power integrated circuits has announced that its GaNFast...
by Navitas | Apr 12, 2021 | Front Page, Latest News, Press Releases
Gallium nitride (GaN) power ICs capture more of the $20B silicon market. DUBLIN, IRELAND –(PRWeb)— Navitas Semiconductor today announced that Spigen Inc. has extended its range of ‘ArcStation Pro’ GaN-based fast chargers, now including the world’s smallest 45W...
by Navitas | Nov 11, 2022 | Front Page, IR, Latest News, Press Releases
Cooperation will bring significant advantages to next-generation systems using power-efficient gallium-nitride (GaN) technology across a spectrum of applications Torrance, CA., and Brussels, Belgium – 11th November, 2022 – Navitas Semiconductor (Nasdaq: NVTS), an...
by Navitas | Oct 31, 2022 | Front Page, IR, Latest News, Press Releases
Industry-leading GaN and SiC technologies for $22B market presented in keynote, industrial papers and exhibition booth Torrance, CA – October 31st, 2022— Navitas Semiconductor (Nasdaq: NVTS), the pure-play, industry leader in next-generation power semiconductors...
by Navitas | Sep 29, 2022 | Front Page, IR, Latest News, Press Releases
Industry-leading, high-speed GaNFast™ and GeneSiC™ technologies deliver energy savings, faster charging, extended range, and lower system costs El Segundo, CA – September 29th, 2022— As US auto sales are forecasted to be majority EV by 2030, Navitas Semiconductor...
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