by Navitas | Aug 5, 2024 | Front Page, IR, Latest News, Mobile PR, Press Releases
Next-gen GaNFast™ gallium nitride power ICs now fast-charge Samsung’s Galaxy Series-A, Galaxy Z Fold6 and Galaxy Z Flip6 phones Torrance, CA – August 5th, 2024— Navitas Semiconductor (Nasdaq: NVTS), the industry leader in next-generation GaNFast™ gallium nitride (GaN)...
by Navitas | Feb 21, 2024 | Front Page, Latest News, Press Releases
Next-gen gallium nitride (GaNFast™) technology enables “Super-Fast Charging” (SFC) Torrance, CA., USA, February 21st, 2023 — Navitas Semiconductor (Nasdaq: NVTS), the only pure-play, next-generation power semiconductor company and industry leader in gallium nitride...
by Navitas | Oct 31, 2023 | Front Page, IR, IR Financial, Latest News, Press Releases
From S22 to S23, next-gen GaNFast technology continues to replace legacy silicon power chips in ultra-portable, fast-charging mobile market Torrance, CA – October 31st, 2023— Navitas Semiconductor (Nasdaq: NVTS) today announced another GaNFast win at Samsung,...
by Navitas | Jan 17, 2023 | Mobile AI, Short post, Tech Feature
Samsung’s flagship Galaxy S22 Ultra and S22+ smartphones are the latest-generation flagship smartphones from Samsung. They are supported with the small, powerful 45W Super Fast charger, which has the highest power density of any Samsung charger, enabled by NV6014,...
by Navitas | Mar 14, 2022 | Front Page, IR, IR Financial, Latest News, Press Releases
Next-gen semiconductor powers flagship Galaxy S22 Ultra and S22+ smartphones El Segundo, CA, USA – March 14th, 2022— Navitas Semiconductor (Nasdaq: NVTS), the industry-leader in gallium nitride (GaN) power integrated circuits has announced that its GaNFast...
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