by Navitas | Jan 30, 2023 | Tech Features, Tech Features V2
SiC MOSFETs offer superior conductivity and switching performance compared to silicon due to their ‘wide bandgap characteristics and high electric-field strength. However, traditional designs using legacy planar or trench techniques must compromise between...
by Navitas | Jan 17, 2023 | Short post, Tech Features
OPPO’s 50W Mini is a true next-generation GaN fast charger using the latest high-speed topology and enabled by GaNFast Power ICs. A ‘pulsed’ power conversion topology achieves the world’s smallest and thinnest form-factor. Measuring only 82.2 x 39.0 x 10.5 mm (34 cc)...
by Navitas | Jan 17, 2023 | Short post, Tech Features
Samsung’s flagship Galaxy S22 Ultra and S22+ smartphones are the latest-generation flagship smartphones from Samsung. They are supported with the small, powerful 45W Super Fast charger, which has the highest power density of any Samsung charger, enabled by NV6014,...
by Navitas | Jan 12, 2023 | Short post, Tech Features
Anker’s Nano II 100W GaNPrime charger is 34% smaller than conventional silicon 96W charger, with similar capabilities plus two extra ports to power up your MacBook, iPhone, and AirPods all at the same time from a single charger. Using power GaN ICs enables a 100%...
by Navitas | Dec 29, 2022 | Short post, Tech Features
The Lenovo 65W USB-C GaN Adapter ushers in a new age of safe, efficient portable charging. Powered by Gallium Nitride (GaN) ICs, this charger is up to 55% smaller, 60% lighter, 30% more power-efficient compared to legacy silicon chargers. With PD 3.0 certification, it...
by Navitas | Dec 20, 2022 | Short post, Tech Features
During first start-up pulses or during hard-switching conditions, it is desirable to limit the slew rate (dV/dt) of the drain of the low-side GaN power FET during turn-on. This is necessary to reduce EMI or reduce circuit switching noise. To program the turn-on dV/dt...
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