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Navitas Semiconductor - World's First & Fastest GaN Power IC
  • English
  • 中文(简体)
  • Products
    • GaNFast Power ICs
    • GeneSiC Power
    • Technology
      • Introduction to Wide Bandgap Semiconductors
      • Gallium nitride: The Facts
      • Silicon Carbide: The Facts
      • GaNFast Power ICs
      • GaNSense Power ICs
      • GaNSense Half-Bridge Power ICs
      • GeneSiC MOSFETs and Diodes
      • Sustainability Report
  • Applications
    • Mobile
    • Consumer
    • Data center
    • Solar
    • Industrial Motor Drive
    • EV
    • Smart Grid
    • Transportation
  • Design Support
    • App Notes, Technical Articles & White papers
    • Technology
      • Introduction to Wide Bandgap Semiconductors
      • Gallium nitride: The Facts
      • Silicon Carbide: The Facts
      • GaNFast Power ICs
      • GaNSense Power ICs
      • GaNSense Half-Bridge Power ICs
      • GeneSiC MOSFETs and Diodes
      • Sustainability Report
    • Tech Features
    • Quality
    • Contact Navitas
    • GaNFast.com
  • Company
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      • Press Releases
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        • Contact IR
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Trench-Assisted Planar Gate SiC MOSFET Technology runs 25°C cooler than competition.

Trench-Assisted Planar Gate SiC MOSFET Technology runs 25°C cooler than competition.

by Navitas | Jan 30, 2023 | Tech Features, Tech Features V2

SiC MOSFETs offer superior conductivity and switching performance compared to silicon due to their ‘wide bandgap characteristics and high electric-field strength. However, traditional designs using legacy planar or trench techniques must compromise between...
ChargerLab: Teardown of Realme 50W Mini SuperDart Charger

ChargerLab: Teardown of Realme 50W Mini SuperDart Charger

by Navitas | Jan 17, 2023 | Short post, Tech Features

OPPO’s 50W Mini is a true next-generation GaN fast charger using the latest high-speed topology and enabled by GaNFast Power ICs. A ‘pulsed’ power conversion topology achieves the world’s smallest and thinnest form-factor. Measuring only 82.2 x 39.0 x 10.5 mm (34 cc)...
ChargerLab: Teardown of New Samsung 45W GaN Charger

ChargerLab: Teardown of New Samsung 45W GaN Charger

by Navitas | Jan 17, 2023 | Short post, Tech Features

Samsung’s flagship Galaxy S22 Ultra and S22+ smartphones are the latest-generation flagship smartphones from Samsung. They are supported with the small, powerful 45W Super Fast charger, which has the highest power density of any Samsung charger, enabled by NV6014,...
ChargerLab: Teardown of Anker 100W USB-C Charger, 736 Charger (Nano II 100W)

ChargerLab: Teardown of Anker 100W USB-C Charger, 736 Charger (Nano II 100W)

by Navitas | Jan 12, 2023 | Short post, Tech Features

Anker’s Nano II 100W GaNPrime charger is 34% smaller than conventional silicon 96W charger, with similar capabilities plus two extra ports to power up your MacBook, iPhone, and AirPods all at the same time from a single charger. Using power GaN ICs enables a 100%...
ChargerLab: Teardown of Lenovo thinkplus GaN Nano 65W Charger

ChargerLab: Teardown of Lenovo thinkplus GaN Nano 65W Charger

by Navitas | Dec 29, 2022 | Short post, Tech Features

The Lenovo 65W USB-C GaN Adapter ushers in a new age of safe, efficient portable charging. Powered by Gallium Nitride (GaN) ICs, this charger is up to 55% smaller, 60% lighter, 30% more power-efficient compared to legacy silicon chargers. With PD 3.0 certification, it...
GaNSense Half-Bridge IC – Programmable Turn-on dV/dt Control

GaNSense Half-Bridge IC – Programmable Turn-on dV/dt Control

by Navitas | Dec 20, 2022 | Short post, Tech Features

During first start-up pulses or during hard-switching conditions, it is desirable to limit the slew rate (dV/dt) of the drain of the low-side GaN power FET during turn-on. This is necessary to reduce EMI or reduce circuit switching noise. To program the turn-on dV/dt...
« Older Entries

Recent Posts

  • “Welcome to Planet Navitas!” at Premier Power Electronics Conference, APEC 2023
  • Navitas GaNSense™ Half-Bridge Power ICs Win Power Product of the Year
  • Trench-Assisted Planar Gate SiC MOSFET Technology runs 25°C cooler than competition.
  • Navitas and KATEK Accelerate Solar Adoption with Higher Efficiency and Lower Costs
  • EDN: Navitas’ design journey in the GaN semiconductor realm

Recent Comments

  • All about GaN chargers – What? Why? Where? - Yantragyan on Silicon Chips Are History: Navitas Gallium Nitride Shrinks OPPO’s Fast Charger by 12x
  • Mika Shih on Navitas and BRUSA Announce Development Partnership to Accelerate EV Adoption
  • Navitas Semiconductor to Go Public through SPAC Merger | SPAC Feed on Navitas Semiconductor, the Industry Leader in Gallium Nitride (GaN) Power ICs, to Go Public at an Enterprise Value of $1.04 Billion via Live Oak II SPAC Business Combination
  • Week In Review: Design, Low Power (via Qpute.com) – Quantum Computing on Navitas Semiconductor, the Industry Leader in Gallium Nitride (GaN) Power ICs, to Go Public at an Enterprise Value of $1.04 Billion via Live Oak II SPAC Business Combination
  • Week In Review: Design, Low Power on Navitas Semiconductor, the Industry Leader in Gallium Nitride (GaN) Power ICs, to Go Public at an Enterprise Value of $1.04 Billion via Live Oak II SPAC Business Combination

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Navitas Semiconductor was formed in 2014 to enable a high-speed revolution in power electronics. As the only pure-play, next-generation power semiconductor company, we are making this revolution possible with GaNFast™ integrated gallium nitride (GaN) power ICs, and GeneSiC™ silicon carbide power MOSFETs and Schottky MPS diodes that deliver best-in-class performance, ruggedness and quality.

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Latest News

  • “Welcome to Planet Navitas!” at Premier Power Electronics Conference, APEC 2023 1st February 2023
  • Navitas GaNSense™ Half-Bridge Power ICs Win Power Product of the Year 31st January 2023
  • Trench-Assisted Planar Gate SiC MOSFET Technology runs 25°C cooler than competition. 30th January 2023
  • Navitas and KATEK Accelerate Solar Adoption with Higher Efficiency and Lower Costs 26th January 2023
  • EDN: Navitas’ design journey in the GaN semiconductor realm 20th January 2023

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CA 90503, USA.
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