by Navitas | Feb 15, 2023 | CES23Feat, Front Page, In the Media, Latest News, Short post
“At CES 2023, Navitas Semiconductor invited CES attendees to discover how next-generation gallium nitride (GaN) and silicon carbide (SiC) technologies are playing a vital role in delivering global sustainability by enabling fully-electrified housing,...
by Navitas | Feb 6, 2023 | Front Page, In the Media, Latest News, Short post
“Gallium nitride (GaN) and silicon carbide (SiC) semiconductors are now in mass production and rapidly gaining market share. According to market research firm Yole, by the end of 2027, GaN and SiC devices will capture 30% of the power semiconductors market,...
by Navitas | Jan 20, 2023 | CES23Feat, Front Page, In the Media, Latest News, Short post
Just a few years ago, people asked when GaN would happen. And now, when GaN is already here, it’s probably a bit late to join the GaN party. Navitas is one of the few GaN device specialists that are now part of this power electronics market disruption. The year 2023...
by Navitas | Jan 9, 2023 | Front Page, In the Media, IR, IR Financial, IR Financial, Latest News, Press Releases
Leading-edge gallium nitride (GaN) and silicon carbide (SiC) technologies rapidly taking share from legacy silicon chips in $22B/yr market opportunity Torrance, CA – January 9th, 2023—Navitas Semiconductor (Nasdaq: NVTS), the only pure-play, next-generation power...
by Navitas | Nov 2, 2022 | Front Page, In the Media, Latest News, Short post, Tech Features
Traditional Silicon high voltage power MOSFETs have maximum voltage ratings that include maximum allowable avalanche energy levels. Avalanche breakdown limits the robustness and reliability of the power MOSFET due to the rapid and uncontrolled increase in current and...
by Navitas | Nov 1, 2022 | Front Page, In the Media, Industrial Motor News, Latest News, Short post
Gallium nitride (GaN) is a wide-bandgap semiconductor which offers superior characteristics compared to older silicon equivalents, including the ability to switch up to 20x faster and increase power density by over 3x times. Implementing GaN power devices into a...
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