by Navitas | Mar 24, 2021 | Front Page, Latest News, Press Releases
Gallium nitride (GaN) power ICs replace old silicon chips in LG gram 16” laptop fast charger. DUBLIN, IRELAND –(PRWeb)— Navitas Semiconductor today announced that LG Electronics has adopted new gallium nitride (GaN) technology for the first time, using Navitas...
by Navitas | Mar 23, 2021 | Front Page, Latest News, Press Releases
Gallium Nitride (GaN) power ICs adopted by LG Electronics for Gram Notebook. As laptops and smartphones get more powerful yet thinner and lighter, it’s time for fast chargers to upgrade from old, slow and heavy silicon ‘bricks’ to new, fast and lightweight gallium...
by Navitas | Feb 12, 2017 | In the Media
Navitas Semiconductor’s iDrive Gallium Nitride (GaN) Power ICs use the company’s proprietary AllGaN technology, enabling up to 100x higher frequencies than silicon. The NV6131, NV6105 & NV6115 offer a high-efficiency 650V, 160mOhm power FET with increasing...
by Navitas | Nov 11, 2022 | Front Page, IR, Latest News, Press Releases
Cooperation will bring significant advantages to next-generation systems using power-efficient gallium-nitride (GaN) technology across a spectrum of applications Torrance, CA., and Brussels, Belgium – 11th November, 2022 – Navitas Semiconductor (Nasdaq: NVTS), an...
Recent Comments