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AN027: 1200 V SiC JBS Diodes With Ultra-Low Capacitive Reverse Recovery Charge For Fast Switching Applications

by | Jun 7, 2023

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  • Create Date 7th June 2023
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AN027: 1200 V SiC JBS Diodes With Ultra-Low Capacitive Reverse Recovery Charge For Fast Switching Applications

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AN027 1200 V SiC JBS Diodes With Ultra-Low Capacitive Reverse Recovery Charge For Fast Switching ApplicationsDownload