by Navitas | Mar 17, 2025 | AI PR, Data Center PR, Front Page, IR, Latest News, Press Releases
High-power GaNSafe™ & GeneSiC MOSFETs power new levels of energy efficiency, reduce electricity costs, and extend system lifetime. TORRANCE, CA – March 17th, 2025—Navitas Semiconductor (Nasdaq: NVTS), the only pure-play, next-generation power semiconductor company...
by Navitas | Mar 15, 2025 | Front Page, Latest News, Short post
Navitas has announced a latest breakthrough of the world’s first production-released 650 V bi-directional GaNFast ICs™ and IsoFast™ high-speed isolated gate-drivers, creating a paradigm shift in power with single-stage BDS converters, which enables the transition from...
by Navitas | Mar 13, 2025 | Front Page, IR, Latest News, Press Releases CN
双向GaNFast™氮化镓功率芯片搭配新型IsoFast™驱动器，打造高效单级拓扑，全面提升AC-DC与AC-AC转换能效、功率密度及性能 加利福尼亚州托伦斯2025年3月12日讯 — 唯一全面专注的下一代功率半导体公司及下一代氮化镓（GaN）功率芯片和碳化硅（SiC）技术领导者——纳微半导体（纳斯达克股票代码:...
by Navitas | Mar 13, 2025 | Front Page, IR, Latest News, Press Releases
Bi-Directional GaNFast™ plus new IsoFast™ drivers enable advanced ‘single-stage’ topologies to further enhance efficiency, power density, and performance in AC-DC and AC-AC conversion. Torrance, CA – March 13th, 2025—Navitas Semiconductor (Nasdaq: NVTS), the...
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