by Navitas | May 30, 2025 | Front Page, IR, IR Financial, IR Financial, Latest News, Press Releases
TORRANCE, CA – May 30, 2025, Navitas Semiconductor, the only pure-play, next-generation power semiconductor company and industry leader in gallium nitride (GaN) power ICs and silicon carbide (SiC) technology, has announced participation in the following upcoming...
by Navitas | May 23, 2025 | Data Center PR CN, Front Page, IR CN, Latest News, Press Releases CN
GaNSafe™氮化镓功率芯片和第三代快速碳化硅MOSFETs打造下一代可量产电源设计，可满足高功率、高密度服务器机架的开放计算项目（OCP）要求。 加利福尼亚州托伦斯2025年5月21日讯——纳微半导体今日宣布推出专为超大规模AI数据中心设计的最新12kW量产电源参考设计，可适配功率密度达120kW的高功率服务器机架。 该12kW电源遵循ORv3规范及开放计算项目（OCP）标准，采用第三代快速碳化硅MOSFET和新型 IntelliWeave™数字技术，以及配置于三相交错 TP-PFC 和 FB-LLC 拓扑结构中的高功率...
by Navitas | May 22, 2025 | Data Center PR CN, Front Page, IR CN, Latest News, Press Releases CN
纳微积极研发氮化镓与碳化硅技术，助力NVIDIA 800V HVDC数据中心供电系统开发，赋能数据中心兆瓦级IT机架电力扩展 加利福尼亚州托伦斯2025年5月21日讯——纳微半导体 (纳斯达克股票代码: NVTS) 今日宣布参与NVIDIA 英伟达（纳斯达克股票代码: NVDA) 下一代800V HVDC电源架开发，旗下GaNFast™氮化镓和GeneSiC™碳化硅技术将被投入研发，为Kyber机架级系统内的Rubin Ultra等GPU提供电力支持 NVIDIA推出的下一代800V...
by Navitas | May 21, 2025 | AI PR, Data Center PR, Front Page, IR, IR Financial, Latest News, Press Releases
Navitas’ GaN and SiC technologies to be developed to support NVIDIA’s 800 V HVDC data center power infrastructure for1 MW IT racks and beyond. TORRANCE, CA – May 21st, 2025 — Navitas Semiconductor (Nasdaq: NVTS), the industry leader in next-generation...
by Navitas | May 21, 2025 | AI PR, Data Center PR, Front Page, IR, Latest News, Press Releases, Product Release
Next-generation PSU ‘designed for production’ achieves OCP requirements for high-power, high-density server racks, enabled by GaNSafe™ ICs and Gen-3 Fast SiC MOSFETs. TORRANCE, CA – May 21st, 2025—Navitas Semiconductor (Nasdaq: NVTS), the only pure-play,...
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