by Navitas | Oct 31, 2024 | Data Center PR, Front Page, IR, Latest News, Press Releases
Latest GaNSafe™, Gen-3 Fast SiC MOSFETs, and GaNSlim™ power ICs deliver high-efficiency, high-power density performance for AI data centers, EV charging, & consumer solutions. Torrance, CA – October 31st, 2024 — Navitas Semiconductor (Nasdaq: NVTS), the industry...
by Navitas | Oct 28, 2024 | Front Page, IR, Latest News, Press Releases
Explore the latest GaN and SiC technologies to ‘Electrify Our World’ & deliver the most efficient and reliable power solutions for AI data centers, EVs, and consumer markets, from 20 W to 20 MW Torrance, CA – October 28th, 2024—Navitas Semiconductor (Nasdaq:...
by Navitas | Oct 24, 2024 | Front Page, IR, IR Financial, Latest News, Press Releases
Torrance, CA – October 24th, 2024— Navitas Semiconductor (Nasdaq: NVTS) today announced that it will report third quarter 2024 financial results after the market close on Monday, November 4th, 2024. Management will host a conference call and live webcast to...
by Navitas | Oct 18, 2024 | AI PR, Data Center PR, Front Page, IR, Latest News, Press Releases, Product Release
IntelliWeave’s patented digital control combined with high-power GaNSafe™ and Gen 3-Fast SiC MOSFETs enable PFC peak efficiencies to 99.3% and reduces power losses by 30% reduction compared to existing solutions Torrance, CA – October 18th, 2024— At this month’s IEEE...
by Navitas | Oct 15, 2024 | Front Page, In the Media, IR, Latest News, Short post
“My entire career and personal life have revolved around identifying market opportunities and addressing underserved needs. The most significant challenge I’ve encountered is the electrification of our planet, which ties into sustainability, fossil fuel...
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