by Navitas | Jan 31, 2017 | Latest News
[vc_row][vc_column][vc_column_text]A new report confirms Navitas AllGaN™ as the leading technology to challenge $15B power silicon market. For power electronics applications, wide bandgap (WBG)-based technologies (particularly silicon carbide (SiC) and gallium nitride...
by Navitas | Jan 2, 2017 | Latest News
Meet us at CES 2017 in Las Vegas (January 5th-6th) to learn more about the world’s first GaN Power ICs. Fast-forward to a next generation of power and contact [email protected].
by Navitas | Nov 2, 2016 | Latest News, Press Releases
Navitas Semiconductor today announced CEO Gene Sheridan will present the advantages of the world’s first Gallium Nitride (GaN) Power ICs, using its proprietary AllGaN™ technology at the upcoming IEEE Power Electronics Society 4th IEEE Workshop on Wide Bandgap Power...
by Navitas | Sep 13, 2016 | Latest News
Front cover and technical article in IEEE’s Xplore journal “Monolithic HV GaN Power ICs: Performance and Application.” Article: IEEE Xplore September 2016 (requires IEEE log-in)
by Navitas | Jul 26, 2016 | Latest News
Models now available for 650V NV6105 (integrated GaN Power IC). File formats .asy and .cir sent as email attachments.
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