by Navitas | Jun 22, 2023 | EV News, Front Page, In the Media, Latest News, Short post
“Navitas has monolithically integrated drive, control and protection features in its e-mode GaN HEMT device. This approach, with reduced parasitics and fewer external components, allows GaN to be used at its full, high-speed potential with superior switching...
by Navitas | Jun 20, 2023 | Front Page, IR, Latest News, Press Releases
Visitors to discover how next-gen GaN and SiC accelerate adoption of EVs and renewable energy, plus enable 2x increased power for AI data centers. Torrance, CA., USA, June 20th, 2023— Navitas Semiconductor (Nasdaq: NVTS), announced its participation in one of Asia’s...
by Navitas | Jun 16, 2023 | Front Page, IR, IR Financial, Latest News, Press Releases
Executives to review $760M customer pipeline, recently completed $92M equity offering Torrance, CA – June 16th, 2023, Navitas Semiconductor (Nasdaq: NVTS), the only pure-play, next-generation power semiconductor company and industry leader in gallium nitride (GaN)...
by Navitas | Jun 9, 2023 | Front Page, IR, IR Financial, Latest News, Press Releases
Executives to review $760M customer pipeline, recently completed $92M equity offering Torrance, CA – June 9th, 2023: Navitas Semiconductor (Nasdaq: NVTS), the industry leader in next-generation power semiconductors, has announced participation in a virtual Taiwan...
by Navitas | Jun 5, 2023 | Front Page, IR, IR Financial, Latest News, Press Releases
Torrance, Calif., June 5, 2023 – Navitas Semiconductor Corporation (Nasdaq: NVTS) today announced, in connection with its previously announced public offering of 10,000,000 shares of its Class A common stock, the full exercise by the underwriters of their option to...
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