by Navitas | Nov 28, 2022 | Front Page, IR, IR Financial, Latest News, Press Releases
GaNSense™ half-bridge ICs enable highest efficiency and most compact designs for motor drive systems, while GeneSiC™ MOSFETs drives high-power system innovation Torrance, CA – November 28th, 2022— Navitas Semiconductor (Nasdaq: NVTS), the only pure-play,...
by Navitas | Nov 16, 2022 | Awards, Front Page, IR, IR Financial, Latest News, Press Releases
Three-year revenue growth of 2,300% for next-generation integrated gallium nitride (GaN) ICs that drive up to 3x more power, or 3x faster charging in half the size and weight vs. legacy silicon chips Torrance, CA., November 16th, 2022—Navitas Semiconductor (Nasdaq:...
by Navitas | Nov 15, 2022 | Awards, Front Page, IR, IR Financial, IR Financial, Latest News, Press Releases
Embedded Computing Design awards Navitas for design excellence and market impact at world’s largest power electronics trade fair Torrance, CA., November 15th, 2022—Navitas Semiconductor (Nasdaq: NVTS), the only pure-play, next-generation power semiconductor company...
by Navitas | Nov 14, 2022 | Consumer PR, Front Page, IR, Latest News, Mobile PR, Press Releases
Next-gen gallium nitride (GaN) ICs fast-charge from 1-50% in only 7 minutes Torrance, CA., November 14th, 2022— Navitas Semiconductor (Nasdaq: NVTS), the only pure-play, next-generation power semiconductor company, has announced its next-gen GaNFast power ICs have...
by Navitas | Nov 11, 2022 | Front Page, IR, Latest News, Press Releases
Cooperation will bring significant advantages to next-generation systems using power-efficient gallium-nitride (GaN) technology across a spectrum of applications Torrance, CA., and Brussels, Belgium – 11th November, 2022 – Navitas Semiconductor (Nasdaq: NVTS), an...
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