by Navitas | Aug 27, 2021 | Front Page, In the Media, IR, Latest News, Short post
In an interview with EE Times Asia In Focus, Navitas Co-Founder and CEO Gene Sheridan talks about the key advantages of using GaN—and how it edges out legacy silicon—in power electronics, as well as market sectors seeing increasing adoption of GaN...
by Navitas | Aug 26, 2021 | Front Page, In the Media, IR, Latest News, Press Releases
Gallium nitride (GaN) positioned to replace legacy silicon chips in $13.1B potential market opportunity DUBLIN, IRELAND – AUGUST 26, 2021— Navitas Semiconductor (“the Company” or “Navitas”), the industry leader in GaN power integrated circuits (“ICs”),...
by Navitas | Aug 23, 2021 | Front Page, IR, Latest News, Press Releases
Existing Navitas Investor adds $10mm commitment, at same terms as existing PIPE investors, bringing total anticipated PIPE proceeds to $155mmNew redemption backstop of up to 2mm shares from institutional investor DUBLIN, IRELAND and Memphis, TN. – AUGUST 23,...
by Navitas | Aug 23, 2021 | Front Page, In the Media, Latest News, Short post, Tech Feature
UGREEN and Dr. X from Navitas disassemble the new UGREEN 100 W 3C1A GaNFast charger that can fast charge a MacBook Pro 13″ from 0-45% in 30 minutes or an iPhone 12 from 0-60% in 30 minutes, all thanks to the industry-leading Navitas GaNFast™ power ICs. ...
by Navitas | Aug 17, 2021 | Front Page, In the Media, IR, Latest News, Short post
Bernhard Budaker, Vice President at BRUSA HyPower AG, responsible for the Product Division Power Electronics describes how Navitas GaN power ICs will be a key factor in reducing the size and weight of their electromobility charger products while reducing CO2 footprint...
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