by Navitas | Feb 3, 2021 | Front Page, Latest News
How GaNFast power ICs powered by Gallium Nitride (GaN) deliver ultimate power density in Active-Clamp Flyback (ACF) fast chargers. Read Here ...
by Navitas | Feb 2, 2021 | Awards, Front Page, IR, Latest News, Press Releases
Gallium nitride (GaN) continues to ramp into $20B silicon chip market DUBLIN, Ireland — (PRWeb) Navitas Semiconductor today announced they have been awarded ASPENCORE’s Electronic Products’ “Power Product of the Year” 2020. Navitas’ GaN Power IC NV612x series...
by Navitas | Jan 27, 2021 | Front Page, Latest News
Apsencore Guide to Gallium Nitride edited by Maurizio Di Paolo Emilio and Nitin Dahad As silicon reaches its theoretical performance limits for power electronics, industry is shifting toward wide-bandgap materials like Gallium Nitride (GaN), whose properties provide...
by Navitas | Jan 26, 2021 | Front Page, IR, Latest News, Press Releases
CES award-winning Gallium nitride (GaN) semiconductor ramps quickly into the $20B silicon chip market DUBLIN, Ireland — (PRWeb) Navitas Semiconductor announced that over 13,000,000 of its gallium nitride (GaN) power ICs have been shipped to date with zero...
by Navitas | Jan 12, 2021 | CES2021, In the Media, Latest News, Short post
GaNFast.com is the consumer-facing side of Navitas Semiconductor., the World’s first & only GaN power IC company, founded in 2014 and based in El Segundo CA, USA. GaNFast power ICs are the enabling technology for the next-generation wave of GaN chargers and...
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