by Navitas | Feb 21, 2017 | Latest News, Press Releases
[vc_row][vc_column][vc_column_text] Chinese Translation: Navitas 推出业界首个集成半桥氮化镓 (GaN) 功率 IC Unprecedented AllGaN™ integration solves 30-year industry challenge in high-speed, high-voltage power electronics. EL SEGUNDO, Calif.–(PRWeb)–Navitas Semiconductor...
by Navitas | Feb 7, 2017 | Latest News, Press Releases
[vc_row][vc_column][vc_column_text] Chinese Translation: Navitas 开始生产氮化镓(GaN)功率 IC Production qualification of 650V AllGaN™ Power ICs enables a high-speed revolution in power electronics. EL SEGUNDO, California USA – (PRWeb) – Navitas Semiconductor today...
by Navitas | Nov 2, 2016 | Latest News, Press Releases
Navitas Semiconductor today announced CEO Gene Sheridan will present the advantages of the world’s first Gallium Nitride (GaN) Power ICs, using its proprietary AllGaN™ technology at the upcoming IEEE Power Electronics Society 4th IEEE Workshop on Wide Bandgap Power...
by Navitas | May 10, 2016 | Latest News, Press Releases
Dan Kinzer (CTO) presents opening keynote at PCIM in Nuremberg “Welcome to the Post-Silicon World: Wide Band Gap Powers Ahead.” Press Release • Conference Details • Presentation
by Navitas | Apr 21, 2016 | Latest News, Press Releases
Stephen Oliver (VP Marketing & Sales) presented “GaN Power ICs and the High Frequency Eco-System.” Press Release • Presentation
by Navitas | Mar 16, 2016 | Latest News, Press Releases
First public announcement of AllGaN platform. Press Release • APEC keynote • IEEE TV
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