by Navitas | Dec 31, 2021 | Front Page, IR, IR Financial, Latest News, Press Releases
CEO Gene Sheridan to highlight performance and environmental benefits of next-gen GaN power ICs in EV, solar and data center markets El Segundo, CA – December 31st, 2021— Navitas Semiconductor (Nasdaq: NVTS), the industry-leader in gallium nitride (GaN)...
by Navitas | Dec 23, 2021 | IR, IR Financial, Latest News, Press Releases
Gallium nitride (GaN) positioned to expand from mobile fast chargers to consumer, EV, solar and data center markets El Segundo, CA – December 23rd, 2021 — Navitas Semiconductor (Nasdaq: NVTS), the industry-leader in GaN power integrated circuits (ICs) has announced...
by Navitas | Dec 23, 2021 | CES2022, Front Page, IR, IR Financial, Latest News, Press Releases
700V-rated GaNFast™ power ICs with GaNSense™ technology enable even higher efficiencies and reliability El Segundo, CA – December 23rd, 2021 — Navitas Semiconductor (Nasdaq: NVTS), the industry-leader in gallium nitride (GaN) power integrated circuits (ICs) announced...
by Navitas | Dec 17, 2021 | Front Page, IR, IR Financial, Latest News, Press Releases
Gallium Nitride delivers size, weight and CO2-reduction benefits to Dell users El Segundo, CA – December 17th, 2021 — Navitas Semiconductor (Nasdaq: NVTS), the industry-leader in gallium nitride (GaN) power integrated circuits (ICs) announced that its GaNFast...
by Navitas | Dec 15, 2021 | Front Page, IR, IR Financial, Latest News, Press Releases
Gallium Nitride next-generation semiconductors will “Electrify Our World™” with energy-saving data centers, high-efficiency solar inverters and acceleration of EV adoption. El Segundo, CA – December 15th, 2021 — Navitas Semiconductor (Nasdaq: NVTS), the...
by Navitas | Dec 10, 2021 | Front Page, IR, IR Financial, Latest News, Press Releases
From ultrafast mobile chargers to solar, data centers and EVs, next-gen GaN power ICs revolutionize power electronics El Segundo, CA – December 10th, 2021 — At CES 2022 Navitas Semiconductor (Nasdaq: NVTS), the industry-leader in gallium nitride (GaN) power integrated...
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