by Navitas | Jan 18, 2022 | Front Page, In the Media, IR, IR Financial, Latest News, Short post
Navitas opens the world’s first GaN IC design center dedicated to electric vehicles (EV). “The Navitas EV team has rich talent and proven experience delivering power systems,” said Charles ZHA, VP and GM of Navitas China. “EMobility is an exciting expansion market for...
by Navitas | Jan 13, 2022 | Front Page, IR, IR Financial, Latest News, Press Releases
CTO highlights next-gen GaN ICs to power EVs, solar, datacenter and save up to 2.6 Gtons / year of CO2 emissions El Segundo, CA – January 13th, 2022 Navitas Semiconductor (Nasdaq:NVTS), the industry-leader in GaN power ICs has announced its participation in...
by Navitas | Jan 7, 2022 | Front Page, IR, IR Financial, Latest News, Press Releases
Navitas and Powerland partner to deliver world’s thinnest, lightest 50W GaNFast charger El Segundo, California: January 7th, 2022: Navitas Semiconductor announced today that its GaNFast™ gallium nitride (GaN) ICs power OPPO’s new 50W ultra-thin and ultra-fast ‘League...
by Navitas | Jan 4, 2022 | CES2022, Front Page, IR, IR Financial, Latest News, Press Releases
Next-gen GaN power IC upgrade enables faster charging, longer range and accelerates EV adoption by 3 years, saving 20% road-sector CO2 emissions El Segundo, CA – January 4th, 2022— Navitas Semiconductor (Nasdaq: NVTS), the industry-leader in gallium nitride (GaN)...
by Navitas | Dec 31, 2021 | Front Page, IR, IR Financial, Latest News, Press Releases
CEO Gene Sheridan to highlight performance and environmental benefits of next-gen GaN power ICs in EV, solar and data center markets El Segundo, CA – December 31st, 2021— Navitas Semiconductor (Nasdaq: NVTS), the industry-leader in gallium nitride (GaN)...
by Navitas | Dec 23, 2021 | IR, IR Financial, Latest News, Press Releases
Gallium nitride (GaN) positioned to expand from mobile fast chargers to consumer, EV, solar and data center markets El Segundo, CA – December 23rd, 2021 — Navitas Semiconductor (Nasdaq: NVTS), the industry-leader in GaN power integrated circuits (ICs) has announced...
by Navitas | Dec 23, 2021 | CES2022, Front Page, IR, IR Financial, Latest News, Press Releases
700V-rated GaNFast™ power ICs with GaNSense™ technology enable even higher efficiencies and reliability El Segundo, CA – December 23rd, 2021 — Navitas Semiconductor (Nasdaq: NVTS), the industry-leader in gallium nitride (GaN) power integrated circuits (ICs) announced...
by Navitas | Dec 20, 2021 | Front Page, In the Media, IR, IR Financial, Latest News, Short post
“Gallium nitride (GaN) is beginning to show up across a broad range of power semiconductor applications due to its wide bandgap, enabling fast-charging, very high speeds, and much smaller form factors than silicon-based chips.” Stephen Oliver, VP Corporate...
by Navitas | Dec 17, 2021 | Front Page, IR, IR Financial, Latest News, Press Releases
Gallium Nitride delivers size, weight and CO2-reduction benefits to Dell users El Segundo, CA – December 17th, 2021 — Navitas Semiconductor (Nasdaq: NVTS), the industry-leader in gallium nitride (GaN) power integrated circuits (ICs) announced that its GaNFast...
by Navitas | Dec 15, 2021 | Front Page, IR, IR Financial, Latest News, Press Releases
Gallium Nitride next-generation semiconductors will “Electrify Our World™” with energy-saving data centers, high-efficiency solar inverters and acceleration of EV adoption. El Segundo, CA – December 15th, 2021 — Navitas Semiconductor (Nasdaq: NVTS), the...
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