by Navitas | Mar 2, 2022 | Front-Page, IR, IR-Financial, Latest-News, Press-Releases
$13B market for new gallium nitride (GaN) power ICs, enable 3x faster charging, longer range, lower costs, and lower CO2 emissions than legacy silicon El Segundo, CA – March 2nd, 2022: Navitas Semiconductor (Nasdaq: NVTS), the industry-leader in gallium nitride (GaN)...
by Navitas | Mar 2, 2022 | Front Page, IR, Latest News, Press Releases
纳微半导体GaNFast™️技术进入realme GT Neo 3智能手机供应链 西班牙巴塞罗那：2022 年 3 月 1 日讯 — 氮化镓 (GaN) 功率芯片的行业领导者纳微半导体（纳斯达克股票代码：NVTS）宣布，当地时间本周一在西班牙巴塞罗那举办的MWC世界移动通讯大会上发布的realme GT Neo 3 智能手机系列标配充电器，正式采用了纳微半导体旗下的GaNFast 氮化镓功率芯片。 即将正式上市的realme GT Neo 3 搭载联发科天玑8100芯片，配备的150W...
by Navitas | Mar 1, 2022 | Front-Page, IR, Latest-News, Press-Releases
150W GaNFast™ charger powers new realme GT Neo 3 smartphone from 0-50% in just 5 minutes El Segundo, CA, USA – 28th February, 2022— Navitas Semiconductor (Nasdaq: NVTS), the industry-leader in gallium nitride (GaN) power integrated circuits has announced that its...
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