by Navitas | Sep 29, 2022 | Front Page, IR, Latest News, Press Releases
Industry-leading, high-speed GaNFast™ and GeneSiC™ technologies deliver energy savings, faster charging, extended range, and lower system costs El Segundo, CA – September 29th, 2022— As US auto sales are forecasted to be majority EV by 2030, Navitas Semiconductor...
by Navitas | Sep 27, 2022 | Short post
The GaNSense half-bridge IC integrates a rich feature-set of sensing and protection all into a low inductance, thermally enhanced, industry standard PQFN 6×8 package: Loss-less current sensing Autonomous short circuit protection (<30 ns) Overtemperature...
by Navitas | Sep 21, 2022 | Front Page, In the Media, IR, IR Financial, Latest News, Short post
Navitas Semiconductor the only pure-play, next-generation power semiconductor company and industry leader in GaN power ICs recently announced the industry’s first GaNSense™ half-bridge power ICs. Ralf Higgelke, Technical Editor at WEKA FACHMEDIEN interviewed...
by Navitas | Sep 20, 2022 | Front Page, IR, Latest News, Press Releases
Demos include a wide range of ultra-fast GaN chargers, a new family of GaN half-bridge ICs, and high-performance, rugged SiC MOSFETs El Segundo, CA – September 20th, 2022— Navitas Semiconductor (Nasdaq: NVTS), the only pure-play, next-generation power semiconductor...
by Navitas | Sep 12, 2022 | Short post
GaNSense half-bridge power ICs integrate two GaN FETs with drive, control, sensing, autonomous protection, and level shift isolation, to create a fundamental power-stage building block for power electronics. This revolutionary single component solution reduces...
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