by Navitas | Nov 3, 2022 | EV PR, Front Page, IR, Latest News, Press Releases
New lab accelerates development of advanced EV high-voltage applications using Navitas’ GaNFast™ and GeneSiC™ power semiconductors Torrance, CA – November 3rd, 2022—Navitas Semiconductor (Nasdaq: NVTS), the only pure-play, next-generation power semiconductor...
by Navitas | Nov 2, 2022 | Front Page, In the Media, Latest News, Short post, Tech Features
Traditional Silicon high voltage power MOSFETs have maximum voltage ratings that include maximum allowable avalanche energy levels. Avalanche breakdown limits the robustness and reliability of the power MOSFET due to the rapid and uncontrolled increase in current and...
by Navitas | Nov 1, 2022 | Front Page, IR, IR Financial, Latest News, Press Releases
Torrance, CA – November 1st, 2022— Navitas Semiconductor (Nasdaq: NVTS), the pure-play, industry leader in next-generation power semiconductors, today announced that it will report third quarter 2022 financial results after the market close on Wednesday, November...
by Navitas | Nov 1, 2022 | Front Page, In the Media, Industrial Motor News, Latest News, Short post
Gallium nitride (GaN) is a wide-bandgap semiconductor which offers superior characteristics compared to older silicon equivalents, including the ability to switch up to 20x faster and increase power density by over 3x times. Implementing GaN power devices into a...
by Navitas | Nov 1, 2022 | Front Page, IR, Latest News, Press Releases
GaNFast™ and GeneSiC™ technologies deliver faster charging, energy savings, and lower system costs than legacy silicon chips Torrance, CA – October 31st, 2022— Navitas Semiconductor (Nasdaq: NVTS), the industry leader in gallium nitride (GaN) power ICs and...
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