by Navitas | Jan 31, 2023 | Awards, Front Page, IR, IR Financial, IR Financial, Latest News, Press Releases
Proprietary GaN-IC technology integrates two GaN FETs with drive, control, sensing, autonomous protection, and level-shift isolation to create a fundamental power-stage building block for power electronics Torrance, CA – January 31st, 2023 – Navitas...
by Navitas | Jan 30, 2023 | Uncategorised
SiC MOSFETs offer superior conductivity and switching performance compared to silicon due to their ‘wide bandgap characteristics and high electric-field strength. However, traditional designs using legacy planar or trench techniques must compromise between...
by Navitas | Jan 26, 2023 | Front Page, IR, Latest News, Press Releases, Solar PR
Navitas’ GeneSiC silicon carbide (SiC) MOSFETs simplify design, expand market size for 4.6 kW KATEK solar inverters Torrance, CA., USA, and Memmingen, Germany, January 27th, 2023— Navitas Semiconductor (Nasdaq: NVTS), and KATEK GROUP (FRA: KTEK) announce that KATEK’s...
by Navitas | Jan 26, 2023 | Front Page, IR CN, Latest News, Press Releases CN, Solar PR CN
凭借更简单的设计，纳微旗下GeneSiC的碳化硅MOSFETs，将扩大4.6kW KATEK太阳能逆变器的市场规模。 美国加利福尼亚州托伦斯及德国梅明根，2023年1月27日讯 —— 纳微半导体（纳斯达克股票代码：NVTS）和KATEK集团（法兰克福证券交易所代码：KTEK） 联合宣布：KATEK的coolcept flex系列的Steca太阳能逆变器采用了新型、领先的GeneSiC的功率半导体，有效优化效率、尺寸、重量及成本，将进一步为扩张市场份额提速。...
by Navitas | Jan 20, 2023 | Front Page, IR CN, IR Financial, Latest News, Press Releases CN
极具战略意义的硅控制器技术，加速GaN和SiC市场推进，抢夺传统硅功率器件在多元化市场中的份额 加利福尼亚州托伦斯，2023年1月19日讯：唯一全面专注的下一代功率半导体公司及氮化镓和碳化硅功率芯片行业领导者—纳微半导体（纳斯达克股票代码：NVTS）宣布与广东希荻微电子股份有限公司（以下简称希荻微）达成协议：纳微半导体以2,000万美元等值的股票获取希荻微控股的硅控制器合资企业的剩余少数股权。...
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