by navadmin | Feb 26, 2026 | Front Page, IR, IR Financial, Press Releases
Product and system highlights include the latest industry –leading AI data center solutions, including a 10kW ‘GaN-powered’ 800V-50V brick, ultra-high voltage SiC, SiCPAK™ modules, and 650V & 100V GaNFast™ power devices. Three Industry sessions covering...
by Navitas | Feb 25, 2026 | Front Page, IR, IR Financial, IR Financial, Latest News, Press Releases
TORRANCE, Calif., Feb. 25, 2026 – Navitas Semiconductor, (Nasdaq: NVTS), an industry leader in next-generation GaNFast™ gallium nitride (GaN) and GeneSiC™ silicon carbide (SiC) power semiconductors, today announced the company will participate at the Morgan Stanley...
by navadmin | Feb 24, 2026 | Front Page, IR, IR Financial, IR Financial, Latest News, Press Releases
Accelerating strategic pivot to Navitas 2.0 with focus on GaN and high-voltage SiC solutions targeting high growth, high-power markets (AI Data Centers, Grid and Energy Infrastructure, Performance Computing and Industrial Electrification) totaling $3.5 billion...
by Navitas | Feb 12, 2026 | AI PR, Data Center PR, Front Page, Latest News, Press Releases
The latest GeneSiC™ 5th Generation Trench-Assisted Planar (TAP) SiC MOSFET technology delivers significant improvements in performance, reliability, and robustness for AI data centers, grid and energy infrastructure, and industrial electrification. TORRANCE, CA –...
by Navitas | Feb 9, 2026 | AI PR, Data Center PR, Front Page, IR, Latest News, Press Releases
Industry-leading high-power-density full-brick DC-DC platform leveraging latest 650 V and 100 V GaNFast™ FETs to deliver unmatched efficiency, power density, and performance for 800 V DC and +/-400 V architectures. TORRANCE, CA – February, 9th, 2026 — Navitas...
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