by Navitas | Dec 1, 2025 | Front Page, IR, IR Financial, IR Financial, Latest News, Press Releases
New 3300V and 2300V SiC products based on latest GeneSiC™ Trench-Assisted Planar technology and packaging innovations to augment efficiency and lifetime for AI data center, grid and energy infrastructure and industrial electrification including energy storage,...
by Navitas | Nov 27, 2025 | Front Page, IR, IR Financial, IR Financial, Latest News, Press Releases
TORRANCE, CA – November 27th, 2025 — Navitas Semiconductor (Nasdaq: NVTS), the industry leader in next-generation GaNFast™ gallium nitride (GaN) and GeneSiC™ silicon carbide (SiC) and the Asian distribution giant WT Microelectronics Co., Ltd. (TW: 3036) have...
by Navitas | Nov 20, 2025 | AI PR, Data Center PR, Front Page, IR, Latest News, Press Releases
New technology and foundry partnership expands U.S. capacity for advanced GaN technology, design and at-scale manufacturing to support a wide range of power management applications MALTA, N.Y. and TORRANCE, C.A., November 20, 2025 – GlobalFoundries (Nasdaq: GFS) (GF)...
by Navitas | Nov 18, 2025 | Front Page, IR, IR Financial, IR Financial, Latest News, Press Releases
TORRANCE, Calif. , Nov. 17, 2025 – Navitas Semiconductor, an industry leader in next-generation GaNFast™ gallium nitride (GaN) and GeneSiC™ silicon carbide (SiC) power semiconductors, has announced participation in the following upcoming investor event: UBS...
by Navitas | Nov 7, 2025 | Front Page, IR, IR Financial, IR Financial, Latest News, Press Releases
Raised capital supports the Navitas 2.0 strategy, accelerating the company’s transformation into high-power markets, driving scalable growth and long-term value creation. TORRANCE, CA – November 7, 2025 — Navitas Semiconductor Corporation (Nasdaq: NVTS), an...
by Navitas | Nov 3, 2025 | Front Page, IR, IR Financial, IR Financial, Latest News, Press Releases
Navitas 2.0 – strategic pivot to high-power markets with GaN and high-voltage SiC Key market focus on AI data center, performance computing, energy & grid infrastructure and industrial electrification Decisive actions and reallocation of resources to those...
by Navitas | Oct 13, 2025 | AI PR, Data Center PR, Front Page, IR, Latest News, Press Releases
Navitas unveils new 100 V GaN FETs, alongside 650 V GaN and high voltage SiC devices, purpose-built for NVIDIA’s 800 VDC AI factory architecture, delivering breakthrough efficiency, power density, and performance. TORRANCE, CA – Oct 13th, 2025 — Navitas...
by Navitas | Oct 7, 2025 | Front Page, IR, IR Financial, IR Financial, Latest News, Press Releases
TORRANCE, CA – October 7, 2025— Navitas Semiconductor (Nasdaq: NVTS) today announced that it will report third quarter 2025 financial results after the market close on Monday, November 3rd, 2025. Management will host a conference call and live webcast to present...
by Navitas | Aug 25, 2025 | Front Page, IR, Latest News, Press Releases
Semiconductor veteran brings decades of experience in sales, operations and business leadership. Positions Navitas for expected growth in AI data center as well as energy infrastructure and other industrial markets poised for GaN- and SiC-based electrification....
by Navitas | Aug 4, 2025 | Front Page, IR, IR Financial, Latest News, Press Releases
Navitas Semiconductor to Participate in Upcoming Investor Events TORRANCE, CA – August 4th, 2025, Navitas Semiconductor, the only pure-play, next-generation power semiconductor company and industry leader in gallium nitride (GaN) power ICs and silicon carbide (SiC)...
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