by Navitas | May 3, 2017 | Latest News, Press Releases
[vc_row][vc_column][vc_column_text] Executives Showcase Industry-First GaN Power ICs at PCIM Europe 2017 EL SEGUNDO, Calif.—(PRWeb)—Navitas Semiconductor today announced it will showcase GaN Power IC advances at this year’s PCIM Europe in Nuremberg, Germany May 16th...
by Navitas | Apr 5, 2017 | In the Media, Latest News
Navitas at the leading edge of “U.S. Power Electronics Technology and Manufacturing Roadmap”, by PEIC, submitted to National Institute of Science and Technology (NIST). Part of a 2-year project entitled “Strengthening the Domestic Power Electronics...
by Navitas | Mar 22, 2017 | Latest News
Navitas CEO champions high-frequency roadmap for GaN Power ICs at APEC rap session on Mar 27th.
by Navitas | Mar 13, 2017 | In the Media
The debut article on the world’s first half-bridge GaN Power ICs explores the new world of high-frequency power conversion. Half-bridge circuits are essential building blocks in the power electronics industry, used in everything from smartphone chargers and...
by Navitas | Mar 9, 2017 | Latest News, Press Releases
[vc_row][vc_column][vc_column_text] English Translation: Navitas Announces Significant GaN Power IC Coverage at APEC 2017 业界首创氮化镓 (GaN) 功率 IC 在高密度, 高效率转换器方面树立了新标准 EL SEGUNDO, Calif.–(PRWeb) Navitas （音译:纳微） 半导体公司今天宣布，公司将在 2017 年 3 月 26...
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