by Navitas | Nov 21, 2024 | Awards, Front Page, IR, IR Financial, Latest News, Press Releases
AI Data Centers, EV, and Mobile markets being penetrated by disruptive, next-gen GaN and SiC power semis, displacing legacy silicon chips. Torrance, CA., USA, November 21st, 2024— Navitas Semiconductor (Nasdaq: NVTS) has announced that the company’s revenue growth has...
by Navitas | Nov 14, 2024 | Front Page, IR, Latest News, Press Releases
Torrance, CA – November 14th, 2024— Navitas Semiconductor (Nasdaq: NVTS) the only pure-play, next-generation power semiconductor company and industry leader in gallium nitride (GaN) power ICs and silicon carbide (SiC) technology, today announced participation in the...
by Navitas | Nov 5, 2024 | AI PR, Data Center PR, Front Page, IR, Latest News, Press Releases
Next-generation solution achieves 98% efficiency with high-power GaNSafe™ and Gen-3 Fast SiC™ MOSFETs for AI and hyperscale data centers. Torrance, CA – November 5th, 2024—Navitas Semiconductor (Nasdaq: NVTS), the only pure-play, next-generation power...
by Navitas | Nov 4, 2024 | Front Page, IR, IR Financial, Latest News, Press Releases
Record sales in GaN mobile fast-charger market New, low-voltage GaN technology enters 48V AI data center, EV and robotics markets Strategic partnership with Infineon Technologies enables customer dual sourcing Streamlined market focus and cost structure...
by Navitas | Oct 31, 2024 | Data Center PR, Front Page, IR, Latest News, Press Releases
Latest GaNSafe™, Gen-3 Fast SiC MOSFETs, and GaNSlim™ power ICs deliver high-efficiency, high-power density performance for AI data centers, EV charging, & consumer solutions. Torrance, CA – October 31st, 2024 — Navitas Semiconductor (Nasdaq: NVTS), the industry...
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